The Electronic Band Structure and Conduction Band formation of HfSe₃

Abstract: The anisotropic structure of Group 4 transition metal trichalcogenides (TMTCs) have gained significant interest due to various optoelectronic applications. In this work, the band structure of quasi one-dimensional HfSe₃ is investigated with nano-spot angle resolved photoemission spectroscopy (nanoARPES). The effective hole mass extracted from the band structure was compared with that of TiS₃ and ZrS₃ from prior studies ¹. X-ray absorption spectroscopy (XAS) has been used to characterize the unoccupied states of HfSe₃ and will be compared to the XAS spectra of HfS₃ ² and TiS₃ and ZrS₃ ³. The metal chalcogenide hybridization for Hf differs from the Ti and Zr trichalcogenides. This may be due to the increase in effective atomic number leading to strong spin-orbit interaction of Hf based TMTCs.

References

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