Experimental Explorations of the Kagome-Honeycomb Lateral Heterostructure in FeSn

Kagome lattices have been quickly emerging as an important platform for investigating the correlated and topological electronic states in condensed matter. Among the different Kagome materials, FeSn has attracted tremendous attention as the Kagome planes in FeSn are spatially isolated from each other, close to the true two-dimensional limit. We demonstrate a novel Kagome-honeycomb lateral heterostructure in FeSn using molecular beam epitaxy technique. With scanning tunneling microscopy/spectroscopy, we discover a long-range effect of the heterointerface on the surface flat bands of the Kagome lattice. In conjunction with first-principles calculations, we reveal an orbital selectivity in the evolution of the flat bands near lateral heterointerface. These findings shed light on a new pathway for engineering the electronic properties of the Kagome lattice, which should be beneficial for the development of future quantum devices.