Optimal fluxonium parameters for capacitive cross-resonance gate

ORAL

Abstract

Fluxonium qubits have recently demonstrated millisecond long coherence times enabled by their reduced susceptibility to dielectric losses. This resilience comes from its low qubit frequencies and suppressed charge matrix elements. However, this characteristic also reduces the qubit-qubit coupling between capacitively coupled fluxoniums, which poses a challenge for entangling gates. In this work, we study an architecture for cross-resonance gates with fluxonium qubits. We aim to obtain the fastest gate speed given a low target residual ZZ rate. Using a semi-analytic approach, we find energy design parameters for control and target qubits which generally allows for CNOT gate durations around 150 ns with a 50 kHz residual ZZ under strong charge driving. We further provide estimates of frequency collision windows around harmful control-target and control-spectator transitions.

* This research was co-funded by Top consortia for Knowledge and Innovation (TKI) from the Dutch Ministry of Economic Affair.

Presenters

  • Eugene Y Huang

    Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

Authors

  • Eugene Y Huang

    Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

  • Figen Yilmaz

    Delft University of Technology, QU Tech, Delft University of Technology (TU Delft), QuTech and Kavli Institute of Nanoscience, Delft University of Technology

  • Siddharth Singh

    Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

  • Martijn F Zwanenburg

    Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

  • Taryn V Stefanski

    Delft University of Technology, Quantum Engineering Centre for Doctorial Training, University of Bristol and QuTech and Kavli Institute of Nanoscience, Delft University of Technology

  • Christian K Andersen

    Delft University of Technology