Polar vortices in twisted BaTiO3 layers

ORAL

Abstract

Complex correlated oxides are a class of quantum materials characterized by unscreened d-electrons that interact across competing energy scales, giving rise to a diverse range of functionalities that can be modulated by a variety of external stimuli. However, their cube-on-cube epitaxial structure constrains their growth to single-crystalline substrates, thereby limiting the crystallographic orientations and interfacial phenomena available in sequential layer growth. Recent advances in the manipulation of complex oxides have enabled their isolation from parent substrates, characterization of their properties at the few unit cell limit (2D), and probing as a function of external strains.

Here we demonstrate that twisted BaTiO3 layers produce unconventional strain configurations that results in the formation of ferroelectric topological structures. We analyze the formation of such non-trivial structures as a function of the twisted angle and the thickness of the different layers by means of aberration-corrected scanning transmission electron microscopy in combination with density-functional theory calculations. These results show the possibility to create non-trivial strain patterns through unique moiré assemblies with deep consequences in the ground-state and responses of complex correlated oxides.

* This work has been supported by the Madrid Government (Comunidad de Madrid- Spain) under the Multiannual Agreement with Universidad Complutense de Madrid in the line Research Incentive for Young PhDs, in the context of the V PRICIT (Regional Programme of Research and Technological Innovation); and by Regional Government of Madrid CAM through SINERGICO project Y2020/NMT-6661 CAIRO-CM. Authors acknowledge received funding from the project To2Dox of FlagERA ERA-NET Cofund in Quantum Technologies implemented within the European Union's Horizon 2020 Program.

Publication: G. Sánchez-Santolino, V. Rouco et al., A 2D ferroelectric vortex lattice in twisted BaTiO3 freestanding layers, arXiv:2301.04438

Presenters

  • Victor Rouco

    GFMC. Dept. Fisica de Materiales. Facultad de Fisica. Universidad Complutense. 28040 Madrid, Universidad Complutense de Madrid (UCM)

Authors

  • Victor Rouco

    GFMC. Dept. Fisica de Materiales. Facultad de Fisica. Universidad Complutense. 28040 Madrid, Universidad Complutense de Madrid (UCM)

  • Gabriel Sanchez-Santolino

    GFMC. Dept. Fisica de Materiales. Facultad de Fisica. Universidad Complutense. 28040 Madrid, Complutense University of Madrid

  • Victor Zamora

    GFMC. Dept. Fisica de Materiales. Facultad de Fisica. Universidad Complutense. 28040 Madrid, Universidad Complutense de Madrid (UCM)

  • Sergio Puebla

    Instituto de Ciencia de Materiales de Madrid ICMM-CSIC 28049 Cantoblanco. Spain, Instituto de Ciencia de Materiales de Madrid (CSIC)

  • Hugo Aramberri

    Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg, Luxembourg Institute of Science and Technology

  • Fabian Cuellar

    GFMC. Dept. Fisica de Materiales. Facultad de Fisica. Universidad Complutense. 28040

  • Carmen Munuera

    Instituto de Ciencia de Materiales de Madrid ICMM-CSIC 28049 Cantoblanco. Spain, Instituto de Ciencia de Materiales de Madrid (CSIC)

  • Federico Mompean

    Instituto de Ciencia de Materiales de Madrid ICMM-CSIC 28049 Cantoblanco. Spain, Instituto de Ciencia de Materiales de Madrid (CSIC)

  • Mar Garcia-Hernandez

    Instituto de Ciencia de Materiales de Madrid ICMM-CSIC 28049 Cantoblanco. Spain, Instituto de Ciencia de Materiales de Madrid (CSIC)

  • Andres Castellanos-Gomez

    Instituto de Ciencia de Materiales de Madrid ICMM-CSIC 28049 Cantoblanco. Spain, Instituto de Ciencia de Materiales de Madrid (CSIC)

  • Jorge Iñiguez

    Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg, Luxembourg Inst of Science and Technology

  • Carlos Leon

    GFMC. Dept. Fisica de Materiales. Facultad de Fisica. Universidad Complutense. 28040 Madrid, Instituto de Ciencia de Materiales de Madrid (CSIC)

  • Jacobo Santamaria

    GFMC. Dept. Fisica de Materiales. Facultad de Fisica. Universidad Complutense. 28040 Madrid