Gate-tunable magnetism in monolayer graphene on a nanoscale-patterned ferroelectric substrate

ORAL

Abstract

Ferroelectric thin films have many desirable characteristics that are important for information science and nanoelectronics. The recent discovery of ferroelectricity in boron-doped AlN thin films is especially interesting because of the large polarization achievable, of order 1015 cm-2. Here we use ultra-low voltage electron beam (ULV-EBL)1 to program nanoscale ferroelectric domains in Al1-xBxN thin films. We demonstrate ferroelectric field effects on a graphene/AlBN device using the programmed ferroelectric polarization. Under a patterned square mesh lattice of period ~33 nm, the graphene shows an emergent gate-tunable magnetism and a giant magnetoresistance tuning over 100%. The suggested explanation may relate to the flat band ferromagnetism and the Stoner criteria. This can be a new platform for solid-state-based 2D quantum simulators.

1Appl. Phys. Lett. 117, 253103 (2020)

* BH, JL, PI, and J-PM acknowledge support from the Department of Energy under grant DOE-QIS (DE‐SC0022277).

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Presenters

  • Dengyu Yang

    Carnegie Mellon University

Authors

  • Dengyu Yang

    Carnegie Mellon University

  • Qingrui Cao

    Carnegie Mellon University

  • Erin Akyuz

    Carnegie Mellon University

  • Ranjani Ramachandran

    University of Pittsburgh

  • Muqing Yu

    University of Pittsburgh

  • John Hayden

    The Pennsylvania State University

  • Josh Nordlander

    The Pennsylvania State University

  • Patrick Irvin

    University of Pittsburgh, Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA

  • Jon-Paul Maria

    The Pennsylvania State University, Pennsylvania State University

  • Jeremy Levy

    University of Pittsburgh, Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA

  • Benjamin M Hunt

    Carnegie Mellon University