Exploring Mobility in ZnTe-Coated InAs Nanowires

Nanowire-based devices have rapidly emerged as key elements in the realm of

nanoelectronics and quantum computing. ZnTe is a wide bandgap semiconductor

material that can be used to create heterostructures when combined with other

semiconductor materials, such as InAs. These heterostructures can be host to

quantum wells and quantum dots, which makes them valuable for quantum

computing and photonics technology. Due to the heterovalent nature of the

interface, a better understanding of the electronic properties is necessary. Our

research explores how ZnTe shell coatings influence the mobility of InAs nanowires.

Our analysis will include TEM results showing lattice structure and thickness of ZnTe

shells.