Hybrid MBE Growth and Transport in CaSnO₃-based Heterostructures

CaSnO₃ stands out among alkaline-earth stannates due to its exceptionally wide bandgap of approximately 4.6 eV and its ability to be electron-doped. This presentation offers a comprehensive examination encompassing the growth process, structural characterization, and temperature-dependent electrical transport measurements of CaSnO₃ films. These films were fabricated with carrier densities spanning from 3.3 × 10¹⁹ cm^-3 to 1.6 × 10²⁰ cm^-3 using hybrid Molecular Beam Epitaxy (MBE). Notably, the films exhibited a room-temperature mobility of 42 cm²V^-1s^-1 at a carrier density of 3.3 × 10¹⁹ cm^-3. Furthermore, we will explore the utilization of CaSnO₃ as a wide bandgap spacer and its role in facilitating modulation doping in complex oxides.