Full-Color Phosphor-Free InGaN/AlGaN Nanowire Light-Emitting Diodes Grown By Molecular Beam Epitaxy.

POSTER

Abstract

III-nitride nanowires light-emitting diodes (LEDs) have been intensively investigated. Compared to thin-film structures, nanowires exhibit drastically reduced dislocations and polarization fields, promising for superior LEDs performance. However, a significant roadblock for the development of nanowire LEDs is the very low efficiency, limited by the lack of 3D carrier confinement, poor hole transport, and electron overflow. In this context, we have investigated the molecular beam epitaxial growth, fabrication and characterization of full-color InGaN/AlGaN nanowire LEDs, wherein the emission characteristics are controlled by adjusting the properties of InGaN active region. Moreover, during the epitaxial growth of the InGaN/AlGaN, multiple AlGaN downward-bending shell layers are spontaneously formed due to the diffusion-controlled growth process, leading to the greatly reduced surface nonradiative recombination, and enhanced carrier injection efficiency. The unique core-shell nanowire LEDs exhibit massively increased photoluminescence and electroluminescence intensities compared to conventional InGaN/GaN nanowire LEDs. Additionally, such core-shell LEDs emit strong white light with unprecedentedly high CRI of \textgreater 95, which are ideally suited for future smart lighting applications.

Authors

  • Thang Ha Quoc Bui

    New Jersey Inst of Tech

  • Moab Rajan Philip

    New Jersey Inst of Tech

  • Debbie Andres

    Department of Applied Physics and Department of Physics, Columbia University, Istituto Italiano di Tecnologia, Graphene Labs, Italy, Department of Physics and Astronomy, Purdue University, Department of Electrical Engineering, Princeton University, Department of Applied Physics and Applied Mathematics, Columbia University, NJIT, New Jersey Inst of Technology, New Jersey Inst of Tech, New Jersey Institute of Technology, Center for Advanced Radiation Sources, University of Chicago, High Pressure Science and Technology Advanced Research, State University of New York at Stony Brook, Rutgers University, NIST, Brookhaven National Laboratory, University of Chicago, University of South Florida, ETH Zurich, Max Planck POSTECH/Korea Research Initiative, University of Virginia, Rutgers University - Camden, New Jersey Institute of technology, Shaanxi Normal University, Pohang Science and Technology University, Sungkyunkwan University, Northern Illinois University and Argonne National Laboratory, Beijing National Laboratory for Condensed Matter Physics , and Institute of Physics, Chinese Academy of Sciences, Rutgers U., Orsova Engineers, U.S. Naval Research Laboratory, Center for Space Science and Engineering Research, Virginia Tech, Virginia., Princeton University, NASA Goddard Space Flight Center, Villanova University, SOFIA/USRA, Jet Propulsion Laboratory, Hudson Regional Health Commision, Rutgers University, College of William & Mary, Department of Physics, Drexel University, Drexel University, Drexel Universty, University of Massachusetts Amherst, Pohang Institue of Science and Technology, Indiana University - Purdue University Indianapolis, Department of Physics, University of Maryland, Naval Research Laboratory, Towson Univ, Rice University, Independence Blue Cross Cardiovascular Research Center, Lewis Katz School of Medicine, Temple University, Philadelphia, PA, Department of Physics, Temple University, PulseTorr LLC, Department of Chemistry, West Chester University, Department of Physics, West Chester University, College of William and Mary Dept. of Physics, University of Virginia Dept. of Materials Science and Engineering, United States Naval Academy, Rutgers The State University of New Jersey, Univ of Maryland-College Park, Los Alamos National Laboratory, POSTECH, New Jersey Institute of Technology, Department of Electrical and Computer Engineering, HamSCI/ARRL, Virginia Tech, Rutgers University-Camden, University of Washington, Rutgers, The State University of New Jersey

  • Hieu Nguyen

    New Jersey Inst of Tech