Rare Earths Revisited: LEDs and Single Photon Sources
ORAL · Invited
Abstract
Developing a "smart society" will require advancements in display and quantum computation technologies. These advancements will come in the form of color-tunable LEDs that can be fabricated on the micrometer scale and the fabrication of systems whose quantum states can be isolated and precisely controlled, both of which can be addressed by "trapping" rare earth (RE) ions in a semiconducting host. RE ions are well-known to exhibit sharp, stable optical transitions and long lifetimes that facilitate high-fidelity quantum control, and their integration into mature semiconductor platforms for optoelectronics enables efficient and fast excitation. This latter property is due to a strong coupling between electrically active localized defects and the inert RE ions. In this talk, the benefits of incorporating RE ions into a semiconductor host will be discussed, with two anticipated end applications of this work being electrically controlled color-tunable LEDs for micro-display applications and a spectrally-stable electrically-pumped single-photon source operating in the telecom C-band.
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Publication:Hayley J. Austin, Brandon Mitchell, Dolf Timmerman, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, and Volkmar Dierolf, "Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers," J. Appl. Phys. 131, 1 (2022).
Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-co-doped GaAs, Optics Continuum, 2023 (accepted).
Fumikazu Murakami, Atsushi Takeo, Brandon Mitchell, Volkmar Dierolf, Yasufumi Fujiwara, and Masayoshi Tonouchi, "Enhanced Luminescence Efficiency Based on Dilute Rare-Earth-Doped Superlattice Structures Revealed Through Terahertz Emission Spectroscopy," Nat. Comm. Mater. (under review).
