Temperature Dependence of Electron Spin Coherence in 4H-SiC

ORAL

Abstract

Silicon carbide is currently being considered as a promising material for the creation of electron spin based qubits to be used in quantum computing. We examine the ability of electrons in Silicon vacancies in 4H-SiC to remain coherent, which will help us learn whether they will be able to store information long enough to be useful in quantum computing applications. Using a spin echo technique, we measure T2 lifetimes in 4H-SiC for temperatures ranging from 8K to room temperature. The Si vacancies were created through proton irradiation in two different concentrations. We have found a significant temperature dependence in both samples with a maximum lifetime of 77.6 microseconds $+$/- 5.9 in the sample with more concentrated Si vacancies.

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Authors

  • Margaret Morris

    Brandeis University

  • Jeremy Dentico

    Naval Research Laboratory, Brigham Young University, Dept. of Physics and Astronomy, University of Utah, Utah, Dartmouth, CRG(Choice Research Group), Brandeis University, Imperial College, London, UK, Dartmouth College, Wentworth Institute of Technology

  • Jeremy Dentico

    Naval Research Laboratory, Brigham Young University, Dept. of Physics and Astronomy, University of Utah, Utah, Dartmouth, CRG(Choice Research Group), Brandeis University, Imperial College, London, UK, Dartmouth College, Wentworth Institute of Technology

  • Jeremy Dentico

    Naval Research Laboratory, Brigham Young University, Dept. of Physics and Astronomy, University of Utah, Utah, Dartmouth, CRG(Choice Research Group), Brandeis University, Imperial College, London, UK, Dartmouth College, Wentworth Institute of Technology