W-doped In$_{2}$O$_{3}$ thin films with high electron mobility

High electron mobility thin films of In$_{2-x}$W$_{x}$O$_{3+y}$ (0 $< x <$ 0.075) were prepared on fused SiO$_{2}$ and yttria-stabilized zirconia (001) single crystal substrates by pulsed laser deposition. Best-case mobilities of 104 and 112 cm$^{2}$/Vs were measured at room temperature for polycrystalline and textured films, respectively. Thin film compositional analysis revealed that the W concentration of the highest mobility films was consistently $x \sim $ 0.03. A slight widening of the band gap was detected from films with increasing electron carrier density, and the electron effective mass calculated from Burstein-Moss theory was 0.3$m_{e}$. In$_{2-x}$W$_{x}$O$_{3+y }$films have high visible transmittance of $\sim $ 80{\%}.