Current-Voltage Characteristics of ZnO and MgZnO Nanoparticle Films

ORAL

Abstract

We report on initial results on the measurement of the current-voltage (I-V) characteristics of films of ZnO and Mg$_{x}$Zn$_{1-x}$O (x = 0.15) nanoparticles. The nanoparticles were prepared using wet chemical techniques on insulating thermally grown SiO$_{x}$ (15 um thick) Si substrates. Contact to the nanoparticles was by laying down gold wires, about 2 mm apart, across the as-prepared nanoparticle films. On top of the gold wires was put a glass cover slip on the back of which was painted conducting silver paint. On top of the cover-slip was a portion of a glass slide which was compressed down onto the cover slip and wires to ensure good electrical contact to the nanoparticles. This arrangement enabled the application of a gate voltage to the nanoparticle device. Our initial results show that the I-V characteristics are non-linear and gating can modulate the I-V characteristics. The ZnO device shows no hysteresis whereas the MgZnO device shows hysteresis in the I-V characteristics only for negative source-drain bias. The measurements were performed in a environmental chamber, in the dark at 18 mTorr and 2 x 10$^{{\-}7}$ Torr, for the ZnO and MgZnO films, respectively.

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Authors

  • Chris Berven

    University of Idaho

  • Galina Malovichko

    Physics and Astronomy, Brigham Young University, ADVR, HP Laboratories, University of Idaho, Montana State University, BYU, University of Washington, Department of Chemistry, The Materials Science and Institute, Oregon Nanoscience and Microtechnologies Institute, University of Oregon, University of Idaho, Dept. of Physics, Moscow ID

  • Galina Malovichko

    Physics and Astronomy, Brigham Young University, ADVR, HP Laboratories, University of Idaho, Montana State University, BYU, University of Washington, Department of Chemistry, The Materials Science and Institute, Oregon Nanoscience and Microtechnologies Institute, University of Oregon, University of Idaho, Dept. of Physics, Moscow ID

  • Galina Malovichko

    Physics and Astronomy, Brigham Young University, ADVR, HP Laboratories, University of Idaho, Montana State University, BYU, University of Washington, Department of Chemistry, The Materials Science and Institute, Oregon Nanoscience and Microtechnologies Institute, University of Oregon, University of Idaho, Dept. of Physics, Moscow ID

  • Galina Malovichko

    Physics and Astronomy, Brigham Young University, ADVR, HP Laboratories, University of Idaho, Montana State University, BYU, University of Washington, Department of Chemistry, The Materials Science and Institute, Oregon Nanoscience and Microtechnologies Institute, University of Oregon, University of Idaho, Dept. of Physics, Moscow ID

  • Galina Malovichko

    Physics and Astronomy, Brigham Young University, ADVR, HP Laboratories, University of Idaho, Montana State University, BYU, University of Washington, Department of Chemistry, The Materials Science and Institute, Oregon Nanoscience and Microtechnologies Institute, University of Oregon, University of Idaho, Dept. of Physics, Moscow ID

  • Galina Malovichko

    Physics and Astronomy, Brigham Young University, ADVR, HP Laboratories, University of Idaho, Montana State University, BYU, University of Washington, Department of Chemistry, The Materials Science and Institute, Oregon Nanoscience and Microtechnologies Institute, University of Oregon, University of Idaho, Dept. of Physics, Moscow ID