Giant positive magnetoresistance in Co-doped ZnO nanocluster films

ORAL

Abstract

We studied magnetoresistance of 0.5{\%}, 12{\%} and 30{\%} Co-doped ZnO nanocluster films which are deposited on Si wafer. Microstructure analysis is performed by XPS, TEM and XRD, and shows a uniform mean size of 20 nm with perfect wurtzite ZnO structure. MR increases with Co doping concentration-0.5{\%} with 469{\%} while the other two samples have 744{\%} and 811{\%}. The large magnetoresistance is explained by suppression of spin-dependent hopping paths when localized states with onsite correlation undergo a relatively large Zeeman splitting in a magnetic field due to strong s,p-d interactions.

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Authors

  • You Qiang

    Department of Physics, University of Idaho, USA, Physics, University of Idaho

  • Yufeng Tian

    Department of Physics, University of Idaho, USA, Physics, University of Idaho

  • Shishen Yan

    Physics, Shandong University, China

  • Ryan Souza

    Physics, University of Idaho