Growth of tin sulfide thin films by pulsed laser deposition

Polycrystalline thin films of tin sulfide were grown on fused quartz substrates from an Sn$_{2}$S$_{3}$ target by pulsed laser deposition at temperatures ranging from 200C to 500C and pulse rates between 3Hz and 10Hz. 100nm thick films absorb roughly 50{\%} of incident light in the 400 to 700nm range, and have an optical band gap of approximately 1.5eV. Hall measurements give mobilities of 4 to 15cm$^{2}$/Vs, carrier concentrations of .25 to 2.5 x 10$^{16}$ cm$^{-3}$, and resistivities of 120 to 1000$\Omega $cm, depending on deposition conditions. These properties indicate that tin sulfide may be suitable for use as an absorber layer in thin film photovoltaic devices.