Theory of the band offset at the Si(100)-SiO$_2$ interface

The valence band offset at device quality interfaces between Si(001) and SiO$_2$ are investigated using local density functional electronic structure calculations. Several model interfaces have been examined. One includes a relaxed amorphous oxide and several hundred atoms. The experimental band offset results are re-examined in the context of these calculations. \newline \newline [1] B. Tuttle, Phys. Rev. B {\bf 70}, 125322 (2004).