Temporal and spectral photoluminescence from HVPE grown GaAs

ORAL

Abstract

Defects discovered in low temperature photoluminescence (PL) spectrum recorded from Hydride-Vapor Phase Epitaxial growth of GaAs were measured as a function of secondary HCl flow. An Argon ion laser illuminated the GaAs samples, which were held at 10 K using a liquid He cold finger in a cryogenic dewar. Transitions involving the point defects due to e-Si$_{As}$, V$_{As}$-Si$_{As}$, and e-V$_{Ga}$ are identified in the PL spectrum. The Si defects are plotted as a function of HCl secondary flow rate and carrier concentration. It is postulated that the Si defects are introduced into the growth due to the quartz tube used in the secondary flow. In addition, time resolved PL measurements were made using a femtosecond Ti:sapphire laser and a synchronized Hamamatsu streak camera capable of picosecond temporal resolution. The time resolved PL measurements of the samples substantiated the excellent quality of the crystalline growth.

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Authors

  • Matthew Bohn

    Air Force Institute of Technology

  • Doug Petkie

    AFRL/RX, AFRL/RX, Systran Systems Inc, UCSD, Los Alamos National Laboratory, Ohio Northern University, BFS, Germany, Florida State University, Monmouth College, Ohio Wesleyan University, Department of Chemical and Biomolecular Engineering, The University of Akron, Physics Department, John Carroll University, Department of Chemistry, Knight Chemical Laboratories, The University of Akron, Australian National University, Miami University, Oxford, OH, University of Cincinnati, University of Findlay, Naval Research Laboratory, Washington, DC 20375, Cleveland State University, Health Sciences Dept, Cleveland State University, Physics Dept, Cleveland State University, Bucknell University, Wright State University, Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Wright State University, Department of Physics, University of Puerto Rico, Department of Mechanical Engineer, Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB and UES, Inc., Department of Environmental Science and Policy, School of Science, Marist College, Poughkeepsie, NY 12601, USA, AFRL/711 HPW, EPA Sustainable Technology Division, University of Akron, Rose-Hulman Institute of Technology, Harvard University, LSU, Ohio University, Wittenberg University, Student