Controlling and Understanding the Origin of Free Carriers in Indium Nitride Nanocrystals

POSTER

Abstract

Over the last decade, much interest has been devoted to nitride semiconductors such as indium nitride, InN, which has led to considerable advances in both the growth of InN and understanding of its intrinsic properties.Due to its low-energy direct bandgap of 0.7 eV, large electron affinity, \textasciitilde 6 eV, large thermal and electrical conductivities and unusually small electron effective mass, InN offers tremendous potential for future optoelectronic or electronic applications. However, the growth of nanocrystalline InN still presents some important challenges, and a thorough understanding of the materials properties under quantum confinement conditions is still lacking. Because of a very large electronic affinity, InN is generally always degenerately doped, with electron concentrations that exceed 10$^{\mathrm{20}}$ cm$^{\mathrm{-3}}$. InN nanoparticles consequently show a strong localized plasmon response absorbance in the infrared region, associated with a large density of free electrons. Exploring the properties and understanding the origin of these free electrons would be a big step forward to develop high quality intrinsic InN NCs. In this presentation, we will discuss the properties and origin of the free electrons in InN NCs. Important phenomena in InN NC as well as future study will also be discussed.

Authors

  • Zhihui Liu

    Michigan State University

  • Mikhail Zamkov

    University of Notre Dame, University of Toledo, Case Western Reserve University, John Carroll University, Bowling Green State Univ, Materials Science and Technology Division, Oak Ridge National Laboratory, Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Ohio University, Shanghai Jiao Tong University, Department of Chemistry and Biochemistry, University of Toledo, Department of Chemical Engineering, University of Toledo, Wuhan University, Southeast University, Physics and Astronomy and Center for Photochemical Science, Bowling Green State University, Physics and Astronomy, University of Toledo, Air Force Research Laboratory, Physics and Astronomy, Bowling Green State University, Purdue University, Student/Supervisor, Student, None, University of Michigan, Dearborn, Clemson University, Michigan State University, Bowling Green State University, Physics Dep, Cleveland State University, Physical Therapy Program, Central Michigan State University

  • Mikhail Zamkov

    University of Notre Dame, University of Toledo, Case Western Reserve University, John Carroll University, Bowling Green State Univ, Materials Science and Technology Division, Oak Ridge National Laboratory, Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Ohio University, Shanghai Jiao Tong University, Department of Chemistry and Biochemistry, University of Toledo, Department of Chemical Engineering, University of Toledo, Wuhan University, Southeast University, Physics and Astronomy and Center for Photochemical Science, Bowling Green State University, Physics and Astronomy, University of Toledo, Air Force Research Laboratory, Physics and Astronomy, Bowling Green State University, Purdue University, Student/Supervisor, Student, None, University of Michigan, Dearborn, Clemson University, Michigan State University, Bowling Green State University, Physics Dep, Cleveland State University, Physical Therapy Program, Central Michigan State University

  • Remi Beaulac

    Department of Chemistry, Michigan State University, 574 South Shaw Lane, East Lansing MI, 48824, Michigan State University