Electrical properties of Ti/SiC Schottky barrier diodes

POSTER

Abstract

Silicon carbide Schottky barrier diodes were fabricated with Ti Schottky contacts. The contacts were deposited at different temperatures ranging from 28 $^o$C to 900 $^o$C using a magnetron sputtering deposition system. The diodes were then annealed at 500 $^o$C in vacuum for up to 60 hours. Diodes with the contacts deposited at 200 $^o$C and annealed for 60 hours had the optimum current-voltage characteristics consisting of large barrier height of 1.13 eV and ideality factor of 1.04. These diodes also had a very low leakage current of 6.6 x 10-$^8$ A at a reverse voltage bias of 400 V. The X-ray diffraction analysis of the Ti/SiC contacts revealed the formation of TiC, Ti5Si3 and Ti3SiC2 at the interface. The improved properties for diodes with contacts deposited at 200 $^o$C could be related to formation of reaction products possessing high work functions. These improvements could provide significant gains in performance of 4H-SiC Schottky diodes where Ti is a common metal contact.

Authors

  • Tom Oder

    Department of Physics and Astronomy, Youngstown State University

  • Rudrakant Sollapur

    Miami University, The College of Wooster, University of Dayton, Ohio University and Argonne National Laboratory, Argonne National Laboratory, J. Stefen Inst., Slovenia, Ohio University, Institute of Physics, University of Belgrade, The University of Akron, Faculty of Physics, University of Belgrade, Institute for Multidisciplinary Research, University of Belgrade, Faculty of Sciences, University of Novi Sad, Bowling Green State University, Australian National University, Benet lab, Department of Physics and Electro-Optics Program University of Dayton, Dayton, OH 45469, Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ, Department of Physics, Arizona State University, Tempe, AZ, Electro-Optics Program, University of Dayton, Dayton, OH 45469, Department of Physics and Astronomy, Youngstown State University, University of Memphis, TN, Union College Barbourville, KY, Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, Arizona State University, Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH, Case Western Reserve University, Department of Electrical Engineering and Computer Science, Cleveland, OH, Air Force Research Lab, Materials and Manufacturing Directorate, WPAFB, OH, Ohio Northern Univ, University of Notre Dame, Miami Univ, Leibniz Institute of Photonic Technology e.V.; and Otto Schott Institute of Material Research, Abbe Center of Photonics, Leibniz Institute of Photonic Technology e.V., Institute of Optics and Quantum Electronics, Abbe Center of Photonics, Friedrich Schiller University; and Helmholtz Institute Jena, Institute of Optics and Quantum Electronics, Abbe Center of Photonics, Friedrich Schiller University

  • Rudrakant Sollapur

    Miami University, The College of Wooster, University of Dayton, Ohio University and Argonne National Laboratory, Argonne National Laboratory, J. Stefen Inst., Slovenia, Ohio University, Institute of Physics, University of Belgrade, The University of Akron, Faculty of Physics, University of Belgrade, Institute for Multidisciplinary Research, University of Belgrade, Faculty of Sciences, University of Novi Sad, Bowling Green State University, Australian National University, Benet lab, Department of Physics and Electro-Optics Program University of Dayton, Dayton, OH 45469, Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ, Department of Physics, Arizona State University, Tempe, AZ, Electro-Optics Program, University of Dayton, Dayton, OH 45469, Department of Physics and Astronomy, Youngstown State University, University of Memphis, TN, Union College Barbourville, KY, Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, Arizona State University, Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH, Case Western Reserve University, Department of Electrical Engineering and Computer Science, Cleveland, OH, Air Force Research Lab, Materials and Manufacturing Directorate, WPAFB, OH, Ohio Northern Univ, University of Notre Dame, Miami Univ, Leibniz Institute of Photonic Technology e.V.; and Otto Schott Institute of Material Research, Abbe Center of Photonics, Leibniz Institute of Photonic Technology e.V., Institute of Optics and Quantum Electronics, Abbe Center of Photonics, Friedrich Schiller University; and Helmholtz Institute Jena, Institute of Optics and Quantum Electronics, Abbe Center of Photonics, Friedrich Schiller University

  • Rudrakant Sollapur

    Miami University, The College of Wooster, University of Dayton, Ohio University and Argonne National Laboratory, Argonne National Laboratory, J. Stefen Inst., Slovenia, Ohio University, Institute of Physics, University of Belgrade, The University of Akron, Faculty of Physics, University of Belgrade, Institute for Multidisciplinary Research, University of Belgrade, Faculty of Sciences, University of Novi Sad, Bowling Green State University, Australian National University, Benet lab, Department of Physics and Electro-Optics Program University of Dayton, Dayton, OH 45469, Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ, Department of Physics, Arizona State University, Tempe, AZ, Electro-Optics Program, University of Dayton, Dayton, OH 45469, Department of Physics and Astronomy, Youngstown State University, University of Memphis, TN, Union College Barbourville, KY, Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, Arizona State University, Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH, Case Western Reserve University, Department of Electrical Engineering and Computer Science, Cleveland, OH, Air Force Research Lab, Materials and Manufacturing Directorate, WPAFB, OH, Ohio Northern Univ, University of Notre Dame, Miami Univ, Leibniz Institute of Photonic Technology e.V.; and Otto Schott Institute of Material Research, Abbe Center of Photonics, Leibniz Institute of Photonic Technology e.V., Institute of Optics and Quantum Electronics, Abbe Center of Photonics, Friedrich Schiller University; and Helmholtz Institute Jena, Institute of Optics and Quantum Electronics, Abbe Center of Photonics, Friedrich Schiller University