Impact of Selenium on Surface Morphology & Charge Carrier Dynamics of co-Sputtered CdSexTe1-x Alloys

ORAL

Abstract

Band gap of the co-sputtered CdSexTe1-x ternary alloys for various concentration of Se has been calculated using absorbance and photoluminescence (PL) spectra. A clear evidence of band gap bowing with bowing parameter b = (0.81 ± 0.03) was observed consistent with the values reported by the previous researchers. Enhanced grain size and monotonic increase in photogenerated charge carrier lifetime with Se content has also been observed in CdSexTe1-x alloy. We attributed such a prolonged carrier lifetime to the shallowing of sub-gap defect states because of band gap narrowing, and the enlarged grain.

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Presenters

  • Niraj Shrestha

    University of Toledo

Authors

  • Niraj Shrestha

    University of Toledo

  • Corey Grice

    University of Toledo

  • Ebin Bastola

    The University of Toledo

  • Khagendra Bhandari

    University of Toledo

  • Yanfa Yan

    The University of Toledo, Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Wright Ctr for Photovoltaics Innovation and Commercialization, Sch. for Solar and Adv. Energy, Dept of Physics and Astronomy, Univ of Toledo, Department of Physics and Astronomy, The Wright Center for Photovoltaics Innovation and Commercialization (PVIC), University of Toledo, Toledo OH 43606, USA.

  • Randy J. Ellingson

    University of Toledo