Effects of Hydrostatic Pressure on the Transport and Magnetic Properties of Sb$_{2-x}$Cr$_{x}$Te$_{3}$ Thin Films

POSTER

Abstract

Thin film samples of Molecular Beam Epitaxy grown diluted magnetic semiconductor Sb$_{2-x}$Cr$_{x}$Te$_{3}$ (x=0.15) are being studied in an effort to understand the electrical and magnetic mechanisms that cause these and other similar DMS materials to undergo a ferromagnetic transition at low temperature. By taking advantage of the fact that hydrostatic pressure alters the carrier concentration in these materials, our aim is to examine the carrier-mediated magnetic interactions in this material. Electrical resistivity and Hall effect of these films were measured as a function of temperature from 2 K -- 300 K and pressure up to 1.38 GPa. We find that pressure modestly increases the carrier concentration, while decreasing the resistivity. Moreover, ferromagnetism is enhanced as evidenced by the fact that the coercive field in the anomalous Hall effect increases with pressure and the ferromagnetic transition temperature increases modestly from 50 K to 60 K. Comparisons will be made to the related compound Sb$_{1.85}$V$_{0.15}$Te$_{3}$.

Authors

  • Matthew L. Bowers

    John Carroll University

  • Jeffrey S. Dyck

    John Carroll University

  • Kyung Yu

    University of Akron, Youngstown State University, Shady Side Academy, Westminster College, Nitronex Corporation, Durham, NC, AFRL,Wright-Patterson AFB, Ohio, University of Michigan, Ann Arbor, Department of Physics, The Ohio State University, Lunghwa University of Science and Technology, Eastern Michigan University, Wright State University, Michigan State University, Texas A\&M University and Princeton University, Joint Institute for Nuclear Research (Dubna), Naval Research Laboratory, ManTech SRS Technologies, Inc., Ecopulse, Inc., Army Research Laboratory, University of Surrey, Kettering University, Flint, MI, Pennsylvania State University, University of TN

  • Ctirad Uher

    University of Michigan, Ann Arbor