Comparison of single junction to multiple-quantum well quaternary GaInAsSb 2.2 $\mu $m light-emitting diode

POSTER

Abstract

A strained GaInAsSb/AlGaAsSb multiple-quantum well (MQW) light emitting diode (LED) emitting at 2.2$\mu $m infrared region is investigated. The heterostructure was grown by molecular beam epitaxy and consists of an active region which contains three compressively strained 12nm thick Ga$_{0.64}$In$_{0.36}$As$_{0.06}$Sb$_{0.94}$ QWs separated by 20nm thick Al$_{0.28}$Ga$_{0.72}$As$_{0.02}$Sb$_{0.98}$ barrier in a separate confined heterostructure. X-ray diffraction measurement was used to verify the MQW alloy composition. The sample was processed into variable sized surface emitting LEDs. The emission wavelength was measure with spectrograph and the electroluminescent power (L) was characterized versus current (I) and voltage (V). A peak emission power of 13mW/mm$^{2}$/sr from the 200x200$\mu $m$^{2}$ LED was observed at room temperature with 3000A/cm$^{2}$ peak drive current density at 1{\%} duty cycle. Compared to the single junction bulk LED, the MQW LED exhibited an increase in the output power from 4.5 to 13mW/mm$^{2}$/sr. We will also present the analysis of series resistance and the radiative efficiency of these devices.

Authors

  • Jinhui Tan

    University of Iowa

  • Jonathan Olesberg

    University of Iowa

  • Michael Turner

    Illinois Institute of Technology, Bettendorf High School, Bettendorf, IA, Mississippi Bend Area Education Agency, Bettendorf, IA, Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA, Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA, Max-Planck-Institut fuer Mikrostrukturphysik, Halle, Germany, CNRS, Universite Lyon I, France, Freie Universitaet Berlin, Germany, University of Jyvaskila, Finaland, Iowa State University/Ames Laboratory, Materials Science Division, Argonne National Laboratory and Department of Chemistry, Northwestern University, Materials Science Division, Argonne National Laboratory, Advanced Photon Source, Argonne National Laboratory, Ames Laboratory and Iowa State University, Indiana University, Illinois State University, University of Iowa, Louisiana State University, University of Warwick, Rutherford Appleton Laboratory, Coe College, University of Northern Iowa, Iowa State University and Ames Laboratory, University of Illinois, Ames Laboratory, University of Florida, Tulane University, The Department of Physics and The James Franck Institute, The University of Chicago, J.R. Macdonald Laboratory, Department of Physics, Kansas State University, Manhattan, KS 66506, Department of Physics, Augustana College, Sioux Falls, SD 57197, Intense Laser Physics Theory Unit, Illinois State University, Argonne National Laboratory, Dr, Drake University, Physics Department, Ocean University of China, Qingdao, Physics Department, Southern Illinois University Carbondale, Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA, Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA, NEST-CNR-INFM and Scuola Normale Superiore, I-56126 Pisa, Italy, University of New Hampshire Department of Physics, University of Chicago

  • John Prineas

    University of Iowa