The effect of spin fluctuations on scattering rates in diluted magnetic semiconductors

We study the scattering rate of carriers due to large spin fluctuations in diluted magnetic semiconductors near the ferromagnetic transition. Both the carrier-impurity and carrier-carrier scattering rates are considered. We calculate an enhancement of the carrier resistivity when crossing from the paramagnetic to ferromagnetic regimes. The enhanced resistivity has a noticeable impact on spin lifetimes from the Dyakonov-Perel and Elliott-Yafet spin relaxation mechanisms.