Accuracy of Boltzmann Full-impurity-ionization Approximation on Surface Recombination DC Current-Voltage Characteristics.

ORAL

Abstract

Surface recombination DC Current-Voltage (RDCIV) characteristics are used to extract interface properties of Metal-Oxide-Semiconductor (MOS) structure, such as interface trap density and surface dopant impurity concentration. The steady-state Shockley-Read-Hall kinetics with Boltzmann distribution and full-impurity-ionization (BI) approximation are used. Compared with the Fermi distribution and impurity-deionization (FD) theory, the BI approximation gives orders of magnitude higher computation speed required in computer aided integrated circuit design. Accuracy of BI approximation is analyzed by computing the derivation from the exact FD theory, with wide ranges of MOS parameters (substrate dopant impurity concentration, gate oxide thickness, forward source/drain junction bias, interface trap energy level, and transistor temperature). It is shown that BI approximation deviates from the exact FD theory by less than 5{\%} over the practical range of these five parameters.

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Authors

  • R.F. Kelly

    SVT Associates, Department of Material Science and Engineering, Department of Chemistry, University of Florida, Florida International University, WebAssign, North Carolina State University, Broughton High School, Dept.~of Chemistry, Univ.~of Florida, Dept.~of Physics, Univ.~of Florida, National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32306, USA, Center for Superconductivity Research, Dept. of Physics, University of Maryland, College Park, MD, 20742, USA, Dept. of Physics, University of Florida, 32611, USA, Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg, Germany, Physics \& Astronomy, UNC-CH, Chapel Hill, NC, University of North Carolina, Auburn University, University of Virginia, Tech. Univ. Eindhoven, University of Florida, Los Alamos National Labs, University of New Mexico, Advanced Materials Research Institute, University of New Orleans, New Orleans, LA, Department of Physics, University of Florida, UF, NHMFL, FSU / NHMFL, FSU, University of Arkansas, Dept. of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA, Dept. of Physics, University of Florida, Gainesville, FL 32611-8440, USA, Dept. Chemistry Florida State Univeristy, University of Brewen, Tohoku University, Okayama University, Dept of Chemistry, Florida State University, Dept. of Chemistry, Florida State University, National High Magnetic Field Laboratory, Tallahassee, FL, Laboratoire Lois Neel, Grenoble, France, Dept. of Chemistry, Texas A\&M University, Tsinghua Univ., INEL, JINR, Vanderbilt Univ./LBNL, Vanderbilt Univ., SVT Associates, Inc., Department of Chemical Engineering, University of Florida, Department of Materials Science and Engineering, University of Florida, Department of Electrical Engineering, National Central University, Taiwan, University of Miami, North Carolina Central University, University of Missouri Rolla, AB Millimetre, France, Thomas Keating Ltd., UK, Dept. of Physics, Univ. of Florida, Department of Material Science and Engineering University of Florida, Department of Chemistry University of Florida, Department of Chemical Eng. University of Florida, Naval Research Lab, Washington, DC, University of Rajshahi, LENIN All Russian Electrotechnical Institute, Moscow, Russia, Independent Researcher, Argentina

  • Bin B. Jie

    University of Florida

  • Chih-Tang Sah

    University of Florida