Effect of Temperature on Surface Recombination Current at SiO$_{2}$/Si Interface Traps

ORAL

Abstract

Temperature dependences of recombination current at interface traps in MOS transistor structure are investigated using the Shockley-Read-Hall DC recombination-current-voltage (R-DCIV) characteristics. Results include the effects of energy distribution of the interface traps (discrete, constant and U-shaped energy distributions) on the temperature dependences of the base-terminal-current-versus-gate-voltage lineshape (I$_{B}$-V$_{GB})$, peak current and voltage (I$_{B-peak,}$ V$_{GB-peak})$ and their thermal activation energy E$_{A}$, and the reciprocal slope n of the I$_{B-peak}$ versus base/drain (or base/source) p/n junction forward voltage V$_{BD}$. Surface impurity concentration and oxide thickness are varied. Temperature dependences of E$_{A}$, V$_{GB-peak}$ and n are small while I$_{B-peak}$ and R-DCIV linewidth, large. The insensitivity of I$_{B-peak}$ and n on material properties allows experimental extraction of effective interface trap energy distribution.

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Authors

  • Bin B. Jie

    University of Florida

  • R.F. Kelly

    SVT Associates, Department of Material Science and Engineering, Department of Chemistry, University of Florida, Florida International University, WebAssign, North Carolina State University, Broughton High School, Dept.~of Chemistry, Univ.~of Florida, Dept.~of Physics, Univ.~of Florida, National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32306, USA, Center for Superconductivity Research, Dept. of Physics, University of Maryland, College Park, MD, 20742, USA, Dept. of Physics, University of Florida, 32611, USA, Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg, Germany, Physics \& Astronomy, UNC-CH, Chapel Hill, NC, University of North Carolina, Auburn University, University of Virginia, Tech. Univ. Eindhoven, University of Florida, Los Alamos National Labs, University of New Mexico, Advanced Materials Research Institute, University of New Orleans, New Orleans, LA, Department of Physics, University of Florida, UF, NHMFL, FSU / NHMFL, FSU, University of Arkansas, Dept. of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA, Dept. of Physics, University of Florida, Gainesville, FL 32611-8440, USA, Dept. Chemistry Florida State Univeristy, University of Brewen, Tohoku University, Okayama University, Dept of Chemistry, Florida State University, Dept. of Chemistry, Florida State University, National High Magnetic Field Laboratory, Tallahassee, FL, Laboratoire Lois Neel, Grenoble, France, Dept. of Chemistry, Texas A\&M University, Tsinghua Univ., INEL, JINR, Vanderbilt Univ./LBNL, Vanderbilt Univ., SVT Associates, Inc., Department of Chemical Engineering, University of Florida, Department of Materials Science and Engineering, University of Florida, Department of Electrical Engineering, National Central University, Taiwan, University of Miami, North Carolina Central University, University of Missouri Rolla, AB Millimetre, France, Thomas Keating Ltd., UK, Dept. of Physics, Univ. of Florida, Department of Material Science and Engineering University of Florida, Department of Chemistry University of Florida, Department of Chemical Eng. University of Florida, Naval Research Lab, Washington, DC, University of Rajshahi, LENIN All Russian Electrotechnical Institute, Moscow, Russia, Independent Researcher, Argentina

  • R.F. Kelly

    SVT Associates, Department of Material Science and Engineering, Department of Chemistry, University of Florida, Florida International University, WebAssign, North Carolina State University, Broughton High School, Dept.~of Chemistry, Univ.~of Florida, Dept.~of Physics, Univ.~of Florida, National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32306, USA, Center for Superconductivity Research, Dept. of Physics, University of Maryland, College Park, MD, 20742, USA, Dept. of Physics, University of Florida, 32611, USA, Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg, Germany, Physics \& Astronomy, UNC-CH, Chapel Hill, NC, University of North Carolina, Auburn University, University of Virginia, Tech. Univ. Eindhoven, University of Florida, Los Alamos National Labs, University of New Mexico, Advanced Materials Research Institute, University of New Orleans, New Orleans, LA, Department of Physics, University of Florida, UF, NHMFL, FSU / NHMFL, FSU, University of Arkansas, Dept. of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA, Dept. of Physics, University of Florida, Gainesville, FL 32611-8440, USA, Dept. Chemistry Florida State Univeristy, University of Brewen, Tohoku University, Okayama University, Dept of Chemistry, Florida State University, Dept. of Chemistry, Florida State University, National High Magnetic Field Laboratory, Tallahassee, FL, Laboratoire Lois Neel, Grenoble, France, Dept. of Chemistry, Texas A\&M University, Tsinghua Univ., INEL, JINR, Vanderbilt Univ./LBNL, Vanderbilt Univ., SVT Associates, Inc., Department of Chemical Engineering, University of Florida, Department of Materials Science and Engineering, University of Florida, Department of Electrical Engineering, National Central University, Taiwan, University of Miami, North Carolina Central University, University of Missouri Rolla, AB Millimetre, France, Thomas Keating Ltd., UK, Dept. of Physics, Univ. of Florida, Department of Material Science and Engineering University of Florida, Department of Chemistry University of Florida, Department of Chemical Eng. University of Florida, Naval Research Lab, Washington, DC, University of Rajshahi, LENIN All Russian Electrotechnical Institute, Moscow, Russia, Independent Researcher, Argentina