Effects of Energy Distribution of Interface Traps on Recombination DC Current-Voltage Lineshape

ORAL

Abstract

Effects of energy distributions of interface traps in silicon energy gap on recombination DC current-voltage (R-DCIV) characteristics or lineshape are analyzed using Shockley-Read-Hall kinetics. The lineshape is mainly determined by interface traps around silicon midgap, not much affected by the ratio of electron and hole capture rates. On p-type silicon or the p-basewell of inversion n-channel MOS transistor, interface traps above the midgap broaden the lineshape in the accumulation gate-voltage (negative) range, while those below the midgap, the inversion (positive) gate-voltage range. Slater's theory anticipates U-shaped energy distribution of interface traps, which is assumed in this R-DCIV evaluation, showing that the broadened lineshape observed in past experiments, previously attributed to spatial variation of surface dopant impurity concentration, can also arise from energy distribution of interface traps.

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Authors

  • Chih-Tang Sah

  • R.F. Kelly

    SVT Associates, Department of Material Science and Engineering, Department of Chemistry, University of Florida, Florida International University, WebAssign, North Carolina State University, Broughton High School, Dept.~of Chemistry, Univ.~of Florida, Dept.~of Physics, Univ.~of Florida, National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32306, USA, Center for Superconductivity Research, Dept. of Physics, University of Maryland, College Park, MD, 20742, USA, Dept. of Physics, University of Florida, 32611, USA, Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg, Germany, Physics \& Astronomy, UNC-CH, Chapel Hill, NC, University of North Carolina, Auburn University, University of Virginia, Tech. Univ. Eindhoven, University of Florida, Los Alamos National Labs, University of New Mexico, Advanced Materials Research Institute, University of New Orleans, New Orleans, LA, Department of Physics, University of Florida, UF, NHMFL, FSU / NHMFL, FSU, University of Arkansas, Dept. of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA, Dept. of Physics, University of Florida, Gainesville, FL 32611-8440, USA, Dept. Chemistry Florida State Univeristy, University of Brewen, Tohoku University, Okayama University, Dept of Chemistry, Florida State University, Dept. of Chemistry, Florida State University, National High Magnetic Field Laboratory, Tallahassee, FL, Laboratoire Lois Neel, Grenoble, France, Dept. of Chemistry, Texas A\&M University, Tsinghua Univ., INEL, JINR, Vanderbilt Univ./LBNL, Vanderbilt Univ., SVT Associates, Inc., Department of Chemical Engineering, University of Florida, Department of Materials Science and Engineering, University of Florida, Department of Electrical Engineering, National Central University, Taiwan, University of Miami, North Carolina Central University, University of Missouri Rolla, AB Millimetre, France, Thomas Keating Ltd., UK, Dept. of Physics, Univ. of Florida, Department of Material Science and Engineering University of Florida, Department of Chemistry University of Florida, Department of Chemical Eng. University of Florida, Naval Research Lab, Washington, DC, University of Rajshahi, LENIN All Russian Electrotechnical Institute, Moscow, Russia, Independent Researcher, Argentina

  • Bin B. Jie

    University of Florida