Nanowire Transistors, Gate Electrodes, and Their Directed Self-Assembly

ORAL

Abstract

Lithographic processes used in the fabrication of current CMOS technology for microprocessors are rapidly approaching both fundamental and practical limitations. Nanowires capable of acting as either transistors or interconnects are one set of resources currently undergoing heavy research as a possible alternative for lithographic limitations. We present a method for the fabrication of multi-material, segmented nanowires composed of Au and CdSe that display non-linear current-voltage characteristics, and the selective functionalization of these nanowires with DNA by first blocking the Au sites we wish to be non-reactive with 6-mercapto 1-hexanol. Single material, conductive nanowires were then selectively functionalized at only the ends with complementary strands of DNA and were directed to self-assemble with the bound DNA on the segmented nanowires to serve as gate electrodes for the transistors.

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Authors

  • K. Skinner

    Applied and Materials Sciences, UNC-CH, Chapel Hill, NC

  • R.F. Kelly

    SVT Associates, Department of Material Science and Engineering, Department of Chemistry, University of Florida, Florida International University, WebAssign, North Carolina State University, Broughton High School, Dept.~of Chemistry, Univ.~of Florida, Dept.~of Physics, Univ.~of Florida, National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32306, USA, Center for Superconductivity Research, Dept. of Physics, University of Maryland, College Park, MD, 20742, USA, Dept. of Physics, University of Florida, 32611, USA, Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg, Germany, Physics \& Astronomy, UNC-CH, Chapel Hill, NC, University of North Carolina, Auburn University, University of Virginia, Tech. Univ. Eindhoven, University of Florida, Los Alamos National Labs, University of New Mexico, Advanced Materials Research Institute, University of New Orleans, New Orleans, LA, Department of Physics, University of Florida, UF, NHMFL, FSU / NHMFL, FSU, University of Arkansas, Dept. of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA, Dept. of Physics, University of Florida, Gainesville, FL 32611-8440, USA, Dept. Chemistry Florida State Univeristy, University of Brewen, Tohoku University, Okayama University, Dept of Chemistry, Florida State University, Dept. of Chemistry, Florida State University, National High Magnetic Field Laboratory, Tallahassee, FL, Laboratoire Lois Neel, Grenoble, France, Dept. of Chemistry, Texas A\&M University, Tsinghua Univ., INEL, JINR, Vanderbilt Univ./LBNL, Vanderbilt Univ., SVT Associates, Inc., Department of Chemical Engineering, University of Florida, Department of Materials Science and Engineering, University of Florida, Department of Electrical Engineering, National Central University, Taiwan, University of Miami, North Carolina Central University, University of Missouri Rolla, AB Millimetre, France, Thomas Keating Ltd., UK, Dept. of Physics, Univ. of Florida, Department of Material Science and Engineering University of Florida, Department of Chemistry University of Florida, Department of Chemical Eng. University of Florida, Naval Research Lab, Washington, DC, University of Rajshahi, LENIN All Russian Electrotechnical Institute, Moscow, Russia, Independent Researcher, Argentina

  • Sean Washburn

    University of North Carolina at Chapel Hill, Department of Physics and Astronomy, Chapel Hill, NC 27599, Applied and Materials Sciences, UNC-CH, Chapel Hill, NC

  • C. Dwyer

    Computer Science, Duke Unversity, Durham, NC