Single Walled Carbon Nanotube/Silicon Heterojunctions

Characterization of the electrical heterojunction between single walled carbon nanotubes (SWNTs) and semiconductors is important for an array of potential applications. Thin, homogeneous, transparent, films of 100{\%} SWNTs exhibiting good electrical conductivity [1] have already been demonstrated as the hole injection electrode in GaN light emitting diodes [2]. The simultaneous transparency and high electrical conductivity of these films makes them similarly promising for the light transmissive electrode in photovoltaic devices. SWNTs have moreover long been proposed as on-chip, device interconnects. To understand the electrical coupling between the nanotubes and semiconductors, likely to have relevance in such devices, we have begun a systematic exploration of the electrical properties of SWNT/silicon hetrojunctions. We will discuss findings as well as a novel test method made possible by the unique morphology of the nanotubes. 1. Z. Wu, Z. Chen, X. Du, J. M. Logan, J. Sippel, M. Nikolou, K. Kamaras, J. R. Reynolds, D. B. Tanner, A. F. Hebard, A. G. Rinzler, Science 305, 1273 (2004) 2. K. Lee, Z. Wu, Z. Chen, F. Ren, S. J. Pearton, A. G. Rinzler, Nano Lett. \textbf{4}, 911 (2004)