Advances to Enable $^{69,71}$Ga Nuclear Magnetic Resonance of Thin GaN Films

High-field $^{69,71}$Ga Nuclear Magnetic Resonance (NMR) spectroscopy of GaN has recently been shown to be a valuable quantitative characterization technique sensitive to the presence of dopants and defects, polytypes, and distributions of carrier concentrations [1-3]. We report several new approaches that greatly improve the $^{69,71}$Ga detection sensitivity and have enabled study of single 3 $\mu $m thin films of GaN. NMR investigation of submicron films should now be feasible. \newline \newline \textbf{References} \newline [1] J.P. Yesinowski and A.P. Purdy, J. Amer. Chem. Soc., 126, 9166 (2004). \newline [2] J.P. Yesinowski: phys. status sol. (c), 2, 2399 (2005). \newline [3] J.P. Yesinowski, A.P. Purdy, H. Wu, M.G. Spencer, J. Hunting, F.J. DiSalvo: J. Amer. Chem. Soc., 128, 4952 (2006).