Condensed Matter
ORAL · NB
Presentations
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Design and Optimization of Force-Reduced Superconducting Magnets
ORAL
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Authors
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Szabolcs Rembeczki
Florida Institute of Technology
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High-current hunt for Bardeen-Stephen flux motion in A15 superconductor V$_{3}$Si at high fields
ORAL
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Authors
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Rajendra Khadka
University of South Alabama
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Albert Gapud
University of South Alabama
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Lloyd Lumata
National High Magnetic Field Laboratory
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Arneil Reyes
National High Magnetic Field Laboratory
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Philip Kuhns
National High Magnetic Field Laboratory
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David Christen
Oak Ridge National Laboratory
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On narrowed coated conductors: granular field-hysteresis effect on transport critical current
ORAL
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Authors
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Albert Gapud
University of South Alabama
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D.K. Christen
Oak Ridge National Laboratory
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F.A. List III
Oak Ridge National Laboratory
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R. Feenstra
Oak Ridge National Laboratory
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Ultrafast dynamics of one-dimensional excitons in metals and semiconductors.
ORAL
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Authors
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Tobias Herel
Vanderbilt University
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Control of rehydration in sol-gel glasses
ORAL
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Authors
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Carlos Ortiz
Physics Dept. Davidson College
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Daniel Boye
Physics Dept. Davidson College, Davidson College
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EXAFS Studies of the Local Bonding Structures of Ge$_{2}$Sb$_{2}$Te$_{4}$, Ge$_{2}$Sb$_{2}$Te$_{5}$, AND Ge$_{2}$Sb$_{2}$Te$_{7}$
ORAL
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Authors
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Joseph Washington
North Carolina State University
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Michael Paesler
North Carolina State University
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Dave Baker
North Carolina State University
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Gerald Lucovsky
North Carolina State University
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Craig Taylor
Colorado School of Mines
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Graphite Superlattices Simulation Software and its Research Applications
ORAL
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Authors
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Reza Rock
Chemical Engineering, University of Delaware
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Philip W.T. Pong
Metallurgy Division, National Institute of Standards and Technology
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The effect of oxide impurities on the performance of 4H-SiC MOSFETs
ORAL
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Authors
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Xingguang Zhu
206 Allison Lab, Auburn University, Auburn, AL 36849
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A.C. Ahyi
206 Allison lab, Auburn University, Auburn, AL 36849, 206 Allison Lab, Auburn University, Auburn, AL 36849
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J.R. Williams
206 Allison lab, Auburn University, Auburn, AL 36849, 206 Allison Lab, Auburn University, Auburn, AL 36849
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Electrical properties of MOS devices fabricated on the 4H-SiC C-face.
ORAL
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Authors
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Zengjun Chen
206 Allison lab, Auburn University, Auburn, AL 36849
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A.C. Ahyi
206 Allison lab, Auburn University, Auburn, AL 36849, 206 Allison Lab, Auburn University, Auburn, AL 36849
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J.R. Williams
206 Allison lab, Auburn University, Auburn, AL 36849, 206 Allison Lab, Auburn University, Auburn, AL 36849
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