Condensed Matter
ORAL · NB ·
Presentations
-
Design and Optimization of Force-Reduced Superconducting Magnets
ORAL
–
Authors
-
Szabolcs Rembeczki
- Florida Institute of Technology
-
-
High-current hunt for Bardeen-Stephen flux motion in A15 superconductor V$_{3}$Si at high fields
ORAL
–
Authors
-
Rajendra Khadka
- University of South Alabama
-
Albert Gapud
- University of South Alabama
-
Lloyd Lumata
- National High Magnetic Field Laboratory
-
Arneil Reyes
- National High Magnetic Field Laboratory
-
Philip Kuhns
- National High Magnetic Field Laboratory
-
David Christen
- Oak Ridge National Laboratory
-
-
On narrowed coated conductors: granular field-hysteresis effect on transport critical current
ORAL
–
Authors
-
Albert Gapud
- University of South Alabama
-
D.K. Christen
- Oak Ridge National Laboratory
-
F.A. List III
- Oak Ridge National Laboratory
-
R. Feenstra
- Oak Ridge National Laboratory
-
-
Ultrafast dynamics of one-dimensional excitons in metals and semiconductors.
ORAL
–
Authors
-
Tobias Herel
- Vanderbilt University
-
-
Control of rehydration in sol-gel glasses
ORAL
–
Authors
-
Carlos Ortiz
- Physics Dept. Davidson College
-
Daniel Boye
- Physics Dept. Davidson College
- Davidson College
-
-
EXAFS Studies of the Local Bonding Structures of Ge$_{2}$Sb$_{2}$Te$_{4}$, Ge$_{2}$Sb$_{2}$Te$_{5}$, AND Ge$_{2}$Sb$_{2}$Te$_{7}$
ORAL
–
Authors
-
Joseph Washington
- North Carolina State University
-
Michael Paesler
- North Carolina State University
-
Dave Baker
- North Carolina State University
-
Gerald Lucovsky
- North Carolina State University
-
Craig Taylor
- Colorado School of Mines
-
-
Graphite Superlattices Simulation Software and its Research Applications
ORAL
–
Authors
-
Reza Rock
- Chemical Engineering, University of Delaware
-
Philip W.T. Pong
- Metallurgy Division, National Institute of Standards and Technology
-
-
The effect of oxide impurities on the performance of 4H-SiC MOSFETs
ORAL
–
Authors
-
Xingguang Zhu
- 206 Allison Lab, Auburn University, Auburn, AL 36849
-
A.C. Ahyi
- 206 Allison lab, Auburn University, Auburn, AL 36849
- 206 Allison Lab, Auburn University, Auburn, AL 36849
-
J.R. Williams
- 206 Allison lab, Auburn University, Auburn, AL 36849
- 206 Allison Lab, Auburn University, Auburn, AL 36849
-
-
Electrical properties of MOS devices fabricated on the 4H-SiC C-face.
ORAL
–
Authors
-
Zengjun Chen
- 206 Allison lab, Auburn University, Auburn, AL 36849
-
A.C. Ahyi
- 206 Allison lab, Auburn University, Auburn, AL 36849
- 206 Allison Lab, Auburn University, Auburn, AL 36849
-
J.R. Williams
- 206 Allison lab, Auburn University, Auburn, AL 36849
- 206 Allison Lab, Auburn University, Auburn, AL 36849
-