Transport Properties and Surface Morphology Correlated Studies on Graphene Formed by Si Desorption of 6H-SiC

Interest in graphene, a single layer of carbon atoms arranged in a hexagonal lattice, has increased in recent years due to exciting characteristics such as its predicted high mobility [1]. However, developing a method to produce graphene that is easily integrated into existing fabrication processes has proved difficult thus far. One promising method is high temperature annealing of 6H-SiC such that Si desorption occurs [2], although this method leads to graphene that exhibits lower mobility than predicted [3]. Thus, we have investigated the relationship between different growth conditions (i.e. annealing time and temperature), the resulting surface morphology and the transport properties of graphene films produced using this method. Raman spectroscopy, atomic force microscopy, and Van der Pauw Hall mobility measurements have been used to correlate the surface morphology to transport properties of graphene formed on SiC. Understanding the effect of growth conditions on the resulting transport properties will help optimize the fabrication of graphene for use in the next generation of electronic devices and other applications. [1] Novoselov \textit{et al.}, Science \textbf{306}, 666 (2004). [2] C. Berger \textit{et al.}, J. Phys. Chem. B \textbf{108}, 19912 (2004). [3] G. Gu \textit{et al.}, Appl. Phys. Lett. \textbf{90}, 253507 (2007).