Comparative study of radiation-induced magnetoresistance oscillations in MBE material from different sources

Transport studies of GaAs/AlGaAs electron systems have shown microwave- and terahertz- radiation-induced, large amplitude, periodic-in-the-inverse-magnetic-field, magnetoresistance oscillations that saturate into novel radiation-induced zero- resistance states (RIZRS) at the lowest temperatures.[1] The origin of these RIZRS remains an open topic for further experimental investigation, as does the dependence of these phenomena on the impurity configuration and the material quality. It remains to be understood if similar material prepared in different laboratories yield a similar response. In addressing this issue, we examine here the radiation-induced magnetoresistance oscillations in GaAs/AlGaAs material prepared by W. Wegscheider and co-workers, and compare the results to our own previous results obtained on specimens prepared by V. Umansky and co-workers. \\[4pt] [1] R. G. Mani, W. B. Johnson, V. Umansky, V. Narayanamurti, and K. Ploog, Phys. Rev. B 79, 205320 (2009).