New Levels in $^{162}$Gd

ORAL

Abstract

We've measured prompt gamma rays from the fission fragments of the spontaneous fission of $^{252}$Cf in Gammasphere. The data from the experiment have high statistics with 5.7*10$^{11}$ triple and higher gamma coincidences. We examined levels in $^{162}$Gd in this data set which shows very consistent I(I+1) level spacing in the yrast band. This demonstrates consistency with a rotational nucleus that has a large quadrupole deformation. this is common for nuclei in between closed spherical shells. To find new levels and gamma transitions, we looked at triple coincidence gates in the Radware software in which we see population of yrast states up to 16+. We found new evidence for proposed collective bands in this isotope. Results will be discussed.

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Authors

  • Rahul Kulkarni

    Materials and Structures Laboratory, Tokyo Institute of Technology, Jefferson Lab, 12000 Jefferson Avenue, MS 58, Suite 17, Newport News, VA 23606, VirginiaTech, Department of Physics, University of South Alabama, New York University, University of Tennessee Knoxville, Georgia College, North Georgia College \& State Univ., North Carolina Central University, TUNL, James Madison University, Physics Department, Hollins University; JQI, University of Aarhus, University of Tennessee, UNC at Asheville, The College of New Jersey, CERN, Florida Institute of Technology, Mechanical Engineering Department, University of New Mexico, Department of Physics, Florida State University, JINR, Vanderbilt, Tsinghua University, LBNL, Vanderbilt and LBNL, Vanderbilt University, Vanderbilt University, Tsinghua University, Vanderbilt University, LBNL, NBPHS, Vanderbilt University, Dept. of Physics and Astronomy - James Madison University, National High Magnetic Field Laboratory, U. of South Alabama Dept. of Chemistry, U. of South Alabama Dept. of Physics, Ohio State University, Wright State University, Engineering Science and Mechanics, Virginia Tech, US, Department of Nanobio Materials and Electronics, GIST, Republic of Korea, Department of Physics, Virginia Tech

  • Rahul Kulkarni

    Materials and Structures Laboratory, Tokyo Institute of Technology, Jefferson Lab, 12000 Jefferson Avenue, MS 58, Suite 17, Newport News, VA 23606, VirginiaTech, Department of Physics, University of South Alabama, New York University, University of Tennessee Knoxville, Georgia College, North Georgia College \& State Univ., North Carolina Central University, TUNL, James Madison University, Physics Department, Hollins University; JQI, University of Aarhus, University of Tennessee, UNC at Asheville, The College of New Jersey, CERN, Florida Institute of Technology, Mechanical Engineering Department, University of New Mexico, Department of Physics, Florida State University, JINR, Vanderbilt, Tsinghua University, LBNL, Vanderbilt and LBNL, Vanderbilt University, Vanderbilt University, Tsinghua University, Vanderbilt University, LBNL, NBPHS, Vanderbilt University, Dept. of Physics and Astronomy - James Madison University, National High Magnetic Field Laboratory, U. of South Alabama Dept. of Chemistry, U. of South Alabama Dept. of Physics, Ohio State University, Wright State University, Engineering Science and Mechanics, Virginia Tech, US, Department of Nanobio Materials and Electronics, GIST, Republic of Korea, Department of Physics, Virginia Tech

  • Rahul Kulkarni

    Materials and Structures Laboratory, Tokyo Institute of Technology, Jefferson Lab, 12000 Jefferson Avenue, MS 58, Suite 17, Newport News, VA 23606, VirginiaTech, Department of Physics, University of South Alabama, New York University, University of Tennessee Knoxville, Georgia College, North Georgia College \& State Univ., North Carolina Central University, TUNL, James Madison University, Physics Department, Hollins University; JQI, University of Aarhus, University of Tennessee, UNC at Asheville, The College of New Jersey, CERN, Florida Institute of Technology, Mechanical Engineering Department, University of New Mexico, Department of Physics, Florida State University, JINR, Vanderbilt, Tsinghua University, LBNL, Vanderbilt and LBNL, Vanderbilt University, Vanderbilt University, Tsinghua University, Vanderbilt University, LBNL, NBPHS, Vanderbilt University, Dept. of Physics and Astronomy - James Madison University, National High Magnetic Field Laboratory, U. of South Alabama Dept. of Chemistry, U. of South Alabama Dept. of Physics, Ohio State University, Wright State University, Engineering Science and Mechanics, Virginia Tech, US, Department of Nanobio Materials and Electronics, GIST, Republic of Korea, Department of Physics, Virginia Tech

  • Rahul Kulkarni

    Materials and Structures Laboratory, Tokyo Institute of Technology, Jefferson Lab, 12000 Jefferson Avenue, MS 58, Suite 17, Newport News, VA 23606, VirginiaTech, Department of Physics, University of South Alabama, New York University, University of Tennessee Knoxville, Georgia College, North Georgia College \& State Univ., North Carolina Central University, TUNL, James Madison University, Physics Department, Hollins University; JQI, University of Aarhus, University of Tennessee, UNC at Asheville, The College of New Jersey, CERN, Florida Institute of Technology, Mechanical Engineering Department, University of New Mexico, Department of Physics, Florida State University, JINR, Vanderbilt, Tsinghua University, LBNL, Vanderbilt and LBNL, Vanderbilt University, Vanderbilt University, Tsinghua University, Vanderbilt University, LBNL, NBPHS, Vanderbilt University, Dept. of Physics and Astronomy - James Madison University, National High Magnetic Field Laboratory, U. of South Alabama Dept. of Chemistry, U. of South Alabama Dept. of Physics, Ohio State University, Wright State University, Engineering Science and Mechanics, Virginia Tech, US, Department of Nanobio Materials and Electronics, GIST, Republic of Korea, Department of Physics, Virginia Tech

  • Rahul Kulkarni

    Materials and Structures Laboratory, Tokyo Institute of Technology, Jefferson Lab, 12000 Jefferson Avenue, MS 58, Suite 17, Newport News, VA 23606, VirginiaTech, Department of Physics, University of South Alabama, New York University, University of Tennessee Knoxville, Georgia College, North Georgia College \& State Univ., North Carolina Central University, TUNL, James Madison University, Physics Department, Hollins University; JQI, University of Aarhus, University of Tennessee, UNC at Asheville, The College of New Jersey, CERN, Florida Institute of Technology, Mechanical Engineering Department, University of New Mexico, Department of Physics, Florida State University, JINR, Vanderbilt, Tsinghua University, LBNL, Vanderbilt and LBNL, Vanderbilt University, Vanderbilt University, Tsinghua University, Vanderbilt University, LBNL, NBPHS, Vanderbilt University, Dept. of Physics and Astronomy - James Madison University, National High Magnetic Field Laboratory, U. of South Alabama Dept. of Chemistry, U. of South Alabama Dept. of Physics, Ohio State University, Wright State University, Engineering Science and Mechanics, Virginia Tech, US, Department of Nanobio Materials and Electronics, GIST, Republic of Korea, Department of Physics, Virginia Tech

  • Rahul Kulkarni

    Materials and Structures Laboratory, Tokyo Institute of Technology, Jefferson Lab, 12000 Jefferson Avenue, MS 58, Suite 17, Newport News, VA 23606, VirginiaTech, Department of Physics, University of South Alabama, New York University, University of Tennessee Knoxville, Georgia College, North Georgia College \& State Univ., North Carolina Central University, TUNL, James Madison University, Physics Department, Hollins University; JQI, University of Aarhus, University of Tennessee, UNC at Asheville, The College of New Jersey, CERN, Florida Institute of Technology, Mechanical Engineering Department, University of New Mexico, Department of Physics, Florida State University, JINR, Vanderbilt, Tsinghua University, LBNL, Vanderbilt and LBNL, Vanderbilt University, Vanderbilt University, Tsinghua University, Vanderbilt University, LBNL, NBPHS, Vanderbilt University, Dept. of Physics and Astronomy - James Madison University, National High Magnetic Field Laboratory, U. of South Alabama Dept. of Chemistry, U. of South Alabama Dept. of Physics, Ohio State University, Wright State University, Engineering Science and Mechanics, Virginia Tech, US, Department of Nanobio Materials and Electronics, GIST, Republic of Korea, Department of Physics, Virginia Tech

  • Rahul Kulkarni

    Materials and Structures Laboratory, Tokyo Institute of Technology, Jefferson Lab, 12000 Jefferson Avenue, MS 58, Suite 17, Newport News, VA 23606, VirginiaTech, Department of Physics, University of South Alabama, New York University, University of Tennessee Knoxville, Georgia College, North Georgia College \& State Univ., North Carolina Central University, TUNL, James Madison University, Physics Department, Hollins University; JQI, University of Aarhus, University of Tennessee, UNC at Asheville, The College of New Jersey, CERN, Florida Institute of Technology, Mechanical Engineering Department, University of New Mexico, Department of Physics, Florida State University, JINR, Vanderbilt, Tsinghua University, LBNL, Vanderbilt and LBNL, Vanderbilt University, Vanderbilt University, Tsinghua University, Vanderbilt University, LBNL, NBPHS, Vanderbilt University, Dept. of Physics and Astronomy - James Madison University, National High Magnetic Field Laboratory, U. of South Alabama Dept. of Chemistry, U. of South Alabama Dept. of Physics, Ohio State University, Wright State University, Engineering Science and Mechanics, Virginia Tech, US, Department of Nanobio Materials and Electronics, GIST, Republic of Korea, Department of Physics, Virginia Tech

  • Rahul Kulkarni

    Materials and Structures Laboratory, Tokyo Institute of Technology, Jefferson Lab, 12000 Jefferson Avenue, MS 58, Suite 17, Newport News, VA 23606, VirginiaTech, Department of Physics, University of South Alabama, New York University, University of Tennessee Knoxville, Georgia College, North Georgia College \& State Univ., North Carolina Central University, TUNL, James Madison University, Physics Department, Hollins University; JQI, University of Aarhus, University of Tennessee, UNC at Asheville, The College of New Jersey, CERN, Florida Institute of Technology, Mechanical Engineering Department, University of New Mexico, Department of Physics, Florida State University, JINR, Vanderbilt, Tsinghua University, LBNL, Vanderbilt and LBNL, Vanderbilt University, Vanderbilt University, Tsinghua University, Vanderbilt University, LBNL, NBPHS, Vanderbilt University, Dept. of Physics and Astronomy - James Madison University, National High Magnetic Field Laboratory, U. of South Alabama Dept. of Chemistry, U. of South Alabama Dept. of Physics, Ohio State University, Wright State University, Engineering Science and Mechanics, Virginia Tech, US, Department of Nanobio Materials and Electronics, GIST, Republic of Korea, Department of Physics, Virginia Tech

  • Rahul Kulkarni

    Materials and Structures Laboratory, Tokyo Institute of Technology, Jefferson Lab, 12000 Jefferson Avenue, MS 58, Suite 17, Newport News, VA 23606, VirginiaTech, Department of Physics, University of South Alabama, New York University, University of Tennessee Knoxville, Georgia College, North Georgia College \& State Univ., North Carolina Central University, TUNL, James Madison University, Physics Department, Hollins University; JQI, University of Aarhus, University of Tennessee, UNC at Asheville, The College of New Jersey, CERN, Florida Institute of Technology, Mechanical Engineering Department, University of New Mexico, Department of Physics, Florida State University, JINR, Vanderbilt, Tsinghua University, LBNL, Vanderbilt and LBNL, Vanderbilt University, Vanderbilt University, Tsinghua University, Vanderbilt University, LBNL, NBPHS, Vanderbilt University, Dept. of Physics and Astronomy - James Madison University, National High Magnetic Field Laboratory, U. of South Alabama Dept. of Chemistry, U. of South Alabama Dept. of Physics, Ohio State University, Wright State University, Engineering Science and Mechanics, Virginia Tech, US, Department of Nanobio Materials and Electronics, GIST, Republic of Korea, Department of Physics, Virginia Tech