High resolution ion milling of single layer graphene for electronic devices

ORAL

Abstract

Graphene is a potential replacement for silicon in microelectronics but still faces significant hurdles in implementation. The helium-ion microscope is a potential route to the fabrication of graphene-based electronic circuits. Here we will discuss the recent commissioning of a third-generation helium-ion microscope at the Center for Nanophase Materials Sciences and recent results in high-resolution ion milling of electronic structures from single-layer graphene on insulating SiO$_{\mathrm{2}}$. Scattered ions during the milling process create a damage margin around ion-milled areas, which impact electrical conductivity and place a lower limit on the width of conducting graphene structures.

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Authors

  • Adam Rondinone

    Center for Nanophase Materials Sciences, Center for Nanophase Materials Sciences at Oak Ridge National Laboratory

  • Edward Kintzel

    Western Kentucky University, Western Kentucky Univeristy

  • J.K. Hwang

    Western Kentucky University, University of Pardubice, Francis Marion University, Clemson University Professor, Francis Marion University Professor, Undergraduate Administrator, Oak Ridge National Laboratory, Oak Ridge, Tennessee, Austin Peay State University, University Strenwarte-Muenchen, Seoul National University, Gatton Academy for Science and Mathematics, Alabama A\&M University, Cygnus, Center for Nanophase Materials Science at Oak Ridge National Laboratory, Vanderbilt University, Fisk Univ, 2Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY, NOVA Center, Western Kentucky University, Department of Physics, Florida A\&M University, Tallahassee, FL-32307, Correlated Electron Materials Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6061 USA, Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, USA, The Institute of Optics, University of Rochester, Rochester, NY 14627, USA, Universidade Estadual Paulista (UNESP), Clark Atlanta University, Deapartment of Physics \& Astronomy, Georgia State University, USA, Department of Electrical and Computer Engineering, McGill University, Montreal, QC H3A 2A7, Canada, Oak Ridge National Laboratory, University of South Alabama, Samford University, University of Rochester, University of North Carolina, Chapel Hill, Sandia National Laboratories, New Mexico State University, University of Tennessee Space Institute, Shanghai Jiao Tong University, Shanghai, China, University of Leeds, Leeds, UK, Georgia State University, Atlanta GA, University of Alabama at Birmingham, National High Magnetic Field Laboratory, Prairie View A\&M University, Brookhaven National Laboratory, University of Southern Indiana, Center for Nanophase Materials Sciences at Oak Ridge National Laboratory, JINR(Dubna), Tsinghua Univ., LBNL, Vanderbilt Univ., Vanderbilt Univ./Univ. of Tennessee, Knoxville, Vanderbilt Univ./Univ. of Kentucky, GANIL, Vanderbilt Univ./Union Univ., JINR, ORAU, Tsinghua University, LNBL

  • J.K. Hwang

    Western Kentucky University, University of Pardubice, Francis Marion University, Clemson University Professor, Francis Marion University Professor, Undergraduate Administrator, Oak Ridge National Laboratory, Oak Ridge, Tennessee, Austin Peay State University, University Strenwarte-Muenchen, Seoul National University, Gatton Academy for Science and Mathematics, Alabama A\&M University, Cygnus, Center for Nanophase Materials Science at Oak Ridge National Laboratory, Vanderbilt University, Fisk Univ, 2Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY, NOVA Center, Western Kentucky University, Department of Physics, Florida A\&M University, Tallahassee, FL-32307, Correlated Electron Materials Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6061 USA, Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, USA, The Institute of Optics, University of Rochester, Rochester, NY 14627, USA, Universidade Estadual Paulista (UNESP), Clark Atlanta University, Deapartment of Physics \& Astronomy, Georgia State University, USA, Department of Electrical and Computer Engineering, McGill University, Montreal, QC H3A 2A7, Canada, Oak Ridge National Laboratory, University of South Alabama, Samford University, University of Rochester, University of North Carolina, Chapel Hill, Sandia National Laboratories, New Mexico State University, University of Tennessee Space Institute, Shanghai Jiao Tong University, Shanghai, China, University of Leeds, Leeds, UK, Georgia State University, Atlanta GA, University of Alabama at Birmingham, National High Magnetic Field Laboratory, Prairie View A\&M University, Brookhaven National Laboratory, University of Southern Indiana, Center for Nanophase Materials Sciences at Oak Ridge National Laboratory, JINR(Dubna), Tsinghua Univ., LBNL, Vanderbilt Univ., Vanderbilt Univ./Univ. of Tennessee, Knoxville, Vanderbilt Univ./Univ. of Kentucky, GANIL, Vanderbilt Univ./Union Univ., JINR, ORAU, Tsinghua University, LNBL