High resolution ion milling of single layer graphene for electronic devices

Graphene is a potential replacement for silicon in microelectronics but still faces significant hurdles in implementation. The helium-ion microscope is a potential route to the fabrication of graphene-based electronic circuits. Here we will discuss the recent commissioning of a third-generation helium-ion microscope at the Center for Nanophase Materials Sciences and recent results in high-resolution ion milling of electronic structures from single-layer graphene on insulating SiO$_{\mathrm{2}}$. Scattered ions during the milling process create a damage margin around ion-milled areas, which impact electrical conductivity and place a lower limit on the width of conducting graphene structures.