Glass formation in Bi-doped Ga-Ge-Se-Te system

Bismuth is a unique dopant in chalcogenide glasses for novel optical applications. However, its solubility in chalcogenide matrixes is relatively low. This work is focused on glass formation within Bi­­­-modified Ga-(GeSe₄)-(GeTe₄) system, which is considered as perspective chalcogenide matrix to host Bi functionality. The materials were synthesized using standard melt-quenching technique. According to the performed IR spectroscopy, differential scanning calorimetry and X-ray diffraction analysis, the samples with Bi content up to 5 at.% were obtained in a vitreous state, while those with greater amount of Bi (up to 10 at.%) crystallized to a different degree. By varying diameter of the ampoule, melting temperature and quenching rate, the glass forming region can be extended, and the quality of the glass can be further improved.