Dynamic calibration of the injection-dependent carrier lifetime in GaAs

The characterization of defects and their impact on recombination rates in solar cells is crucial for evaluating and improving photovoltaic performance. Injection-dependent lifetime spectroscopy is a sensitive and commonly used technique for investigating recombination rates in semiconductors. However, determination of the photoexcited carrier density during the lifetime experiment can be challenging. We employ a new dynamic calibration approach, which relies on a combination of quasi-steady-state and transient measurements, to obtain the lifetime as a function of charge carrier density in a GaAs/GaInP heterostructure.