Fabrication of Transition Metal Dichalcogenides Devices for Future Applications

POSTER

Abstract

TMD devices are highly innovative due to their unique characteristics and potential for breakthrough applications. A critical step in their fabrication involves precise transfer onto a target substrate. While at Pennsylvania State University, TMDs were successfully grown and transferred onto various substrates. Using Raman spectroscopy and atomic force microscopy, the devices were characterized to assess their intrinsic properties and ensure optimal performance and transfer process. Additionally, at the Joint School of Nanoscience and Nanoengineering, surface modifications were applied to these transfers, introducing novel properties that significantly enhance their functionality in advanced electronics and optoelectronics, pushing the boundaries of what these materials can achieve in next-generation technologies.

*NSF GRF (Fellow ID: 2024364311)JSNN, a member of the NNCI, which is supported by the NSF (Grant ECCS-2025462).2DCC-MIP RSVP supported by the NSF (Cooperative Agreement DMR-2039351)DoD (Contract #W911QY2220006)

Presenters

  • Anna K Sheets

    • University of North Carolina at Greensboro

Authors

  • Anna K Sheets

    • University of North Carolina at Greensboro
  • Shalini Kumari, PhD

    • The Pennsylvania State University
  • Chen Chen, PhD

    • The Pennsylvania State University
  • Andrew Graves, PhD

    • The Pennsylvania State University
  • Joan M Redwing

    • Pennsylvania State University
  • Tetyana Ignatova

    • Joint School of Nanoscience and Nanoengineering - UNCG
    • University of North Carolina at Greensboro