Raman scattering analysis of the structural phase transformations of III-V semiconductors induced by mechanical impact

In the present work we report a Raman scattering study on the structural phase transitions of indium antimonide submitted to high non-hydrostatic pressure applied by mechanical impact, which induces several transformations, leading to very rich Raman spectra. We are able to observe the normal disordered zinc blende structure with a Raman spectrum displaying two broadened peaks at 180 and 190 cm$^2$, an amorphous phase with a Raman spectrum displaying only a broad band centered at about 175 cm$^2$, the optical band, that reflects the vibrational density of optical states, the wurtzite structure with Raman peaks at 145, 175 and 180 cm$^2$ and a completely new and intense Raman spectrum presenting fourteen lines. Similar results for GaAs and GaSb were also obtained.