Single- and two-qubit logic operations with hole spins in a planar silicon 300 mm foundry process

Spin qubits implemented within Group-IV semiconductor hole quantum dots are demonstrating favourable properties for scalable quantum processors. Valence-band holes possess a strong spin-orbit interaction, which enables fast all-electrical spin control via electric-dipole spin resonance (EDSR), eliminating the need for additional micromagnet or antenna structures. Implementing hole spin qubits within 2D planar metal-oxide-semiconductor (MOS) structures allows for the creation of dense 2D architectures. However, hole spin qubits realised in 2D-like quantum dots in planar MOS silicon have not been extensively studied, and as such, their single- and two-qubit properties are not well-characterised.



Here, we demonstrate EDSR control over hole spin qubits in a planar silicon double quantum dot, with an integrated charge sensor for single-shot readout. We achieve single-qubit Rabi frequencies of 28 MHz and control fidelities of 99.2% using randomised benchmarking. Additionally, we demonstrate an exchange interaction reaching 300 MHz and use it to perform two-qubit gates via driven controlled rotations (CROT). Additionally, the device was fabricated using a 300 mm integration flow that is compatible with foundry-based manufacturing. Our results affirm that industrially fabricated 2D MOS silicon quantum dots are feasible platforms for implementing spin qubits.