On-Chip Terahertz Spectroscopy for Dual-Gated van der Waals Heterostructures at Cryogenic Temperatures
ORAL
Abstract
Van der Waals heterostructures have emerged as a versatile platform to study correlated and topological electron physics. Spectroscopy experiments in the THz regime are crucial, since the energy of THz photons matches that of relevant excitations and charge dynamics. However, their micron-size and complex (dual-)gated structures have challenged such measurements. Here, we demonstrate on-chip THz spectroscopy on a dual-gated bilayer graphene device at liquid helium temperature. To avoid unwanted THz absorption by metallic gates, we developed a scheme of operation by combining semiconducting gates and optically controlled gating. This allows us to measure the clean THz response of graphene without being affected by the gates. We observed the THz signatures of electric-field-induced bandgap opening at the charge neutrality. We measured Drude conductivities at varied charge densities and extracted key parameters, such as effective masses and scattering rates. This work paves the way for studying novel emergent phenomena in dual-gated two-dimensional materials.
*This work is funded by NSF DMR-2225925 and NSF DMR-2414725. L.J. acknowledges support from the Sloan Fellowship. J.S. acknowledges support from the Jeollanamdo Provincial Scholarship for Study Overseas. K.W. and T.T. acknowledge support from the JSPS KAKENHI (grant nos. 20H00354, 21H05233 and 23H02052) and World Premier International Research Center Initiative (WPI), MEXT, Japan. A.Y. is supported by the Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE). A.Y. is also partly supported by the Gordon and Betty Moore Foundation through Grant No. GBMF 12762, and by the U.S. Army Research Office (ARO) MURI project under Grant No. W911NF-21-2-0147. This work was carried out in part through the use of MIT.nano's facilities.