On-Chip Terahertz Spectroscopy for Dual-Gated van der Waals Heterostructures at Cryogenic Temperatures

ORAL

Abstract

Van der Waals heterostructures have emerged as a versatile platform to study correlated and topological electron physics. Spectroscopy experiments in the THz regime are crucial, since the energy of THz photons matches that of relevant excitations and charge dynamics. However, their micron-size and complex (dual-)gated structures have challenged such measurements. Here, we demonstrate on-chip THz spectroscopy on a dual-gated bilayer graphene device at liquid helium temperature. To avoid unwanted THz absorption by metallic gates, we developed a scheme of operation by combining semiconducting gates and optically controlled gating. This allows us to measure the clean THz response of graphene without being affected by the gates. We observed the THz signatures of electric-field-induced bandgap opening at the charge neutrality. We measured Drude conductivities at varied charge densities and extracted key parameters, such as effective masses and scattering rates. This work paves the way for studying novel emergent phenomena in dual-gated two-dimensional materials.

*This work is funded by NSF DMR-2225925 and NSF DMR-2414725. L.J. acknowledges support from the Sloan Fellowship. J.S. acknowledges support from the Jeollanamdo Provincial Scholarship for Study Overseas. K.W. and T.T. acknowledge support from the JSPS KAKENHI (grant nos. 20H00354, 21H05233 and 23H02052) and World Premier International Research Center Initiative (WPI), MEXT, Japan. A.Y. is supported by the Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE). A.Y. is also partly supported by the Gordon and Betty Moore Foundation through Grant No. GBMF 12762, and by the U.S. Army Research Office (ARO) MURI project under Grant No. W911NF-21-2-0147. This work was carried out in part through the use of MIT.nano's facilities.

Publication: https://doi.org/10.48550/arXiv.2409.19726

Presenters

  • Junseok Seo

    • Massachusetts Institute of Technology

Authors

  • Junseok Seo

    • Massachusetts Institute of Technology
  • Zhengguang Lu

    • Massachusetts Institute of Technology
    • Florida State Univeristy, Massachusetts Institute of Technology
  • Seunghyun Park

    • Harvard University
  • Jixiang Yang

    • Massachusetts Institute of Technology
  • Fangzhou Xia

    • University of Texas at Austin
    • Massachusetts Institute of Technology
  • Shenyong Ye

    • Massachusetts Institute of Technology
  • Yuxuan Yao

    • Rice university
    • Massachusetts Institute of Technology
  • Tonghang Han

    • Massachusetts Institute of Technology
  • Lihan Shi

    • Massachusetts Institute of Technology
    • Princeton University
  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
    • National Institute of Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Takashi Taniguchi

    • National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Amir Yacoby

    • Harvard University
  • Long Ju

    • MIT