Meandered Niobium Diselenide (NbSe<sub>2</sub>) Inductor for Fluxonium Qubit

ORAL

Abstract

Low-loss microwave materials are essential for improving the coherence of superconducting qubits. Single-crystalline two-dimensional van der Waals (vdW) materials have the potential to be used as building blocks for key components such as capacitors, Josephson Junctions (JJ), and inductors for superconducting quantum devices. In this work, we characterize the kinetic inductance of NbSe2 across varying thicknesses in the GHz regime. We then fabricated a fluxonium superconducting qubit consisting of a single Al-AlOx-Al JJ, shunted by a meandered NbSe2 thin-film inductor, and a capacitor. The fabrication process and the microwave characterization of the fluxonium qubit incorporating NbSe2 inductor will be discussed, exploring its potential for high-coherence superconducting quantum processors.

*This research was funded in part by the US Army Research Office grant no. W911NF-2210023, in part by the National Science Foundation QII-TAQS grant no. OMA-1936263, in part by the Air Force Office of Scientific Research under award number FA2386-21-1-4058, and in part under Air Force Contract No. FA8702-15-D-0001. S.Z. acknowledges support from the Schlumberger Foundation Faculty for the Future Fellowship. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of the US Government.

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Presenters

  • Sameia Zaman

    • Massachusetts Institute of Technology

Authors

  • Sameia Zaman

    • Massachusetts Institute of Technology

  • Joel I-Jan Wang

    • Massachusetts Institute of Technology

  • Junyoung An

    • Massachusetts Institute of Technology

  • Junghyun Kim

    • Massachusetts Institute of Technology

  • Renée DePencier Piñero

    • MIT Lincoln Laboratory
    • Lincoln Laboratory, MIT

  • Thomas R Werkmeister

    • Harvard University

  • Chia-Chin Tsai

    • Massachusetts Institute of Technology

  • Hung-Yu Tsao

    • Massachusetts Institute of Technology

  • Kate Azar

    • MIT Lincoln Laboratory

  • Sein Park

    • Massachusetts Institute of Technology

  • Daniel Rodan Legrain

    • Massachusetts Institute of Technology - MIT

  • Aranya Goswami

    • Massachusetts Institute of Technology

  • William P Banner

    • Massachusetts Institute of Technology

  • Gabriel Cutter

    • Massachusetts Institute of Technology

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
    • National Institute of Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    • National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science

  • Terry P Orlando

    • Massachusetts Institute of Technology

  • Jeffrey A Grover

    • Massachusetts Institute of Technology

  • Kyle Serniak

    • MIT Lincoln Laboratory
    • Lincoln Laboratory, Massachusetts Institute of Technology

  • Pablo Jarillo-Herrero

    • Massachusetts Institute of Technology

  • Philip Kim

    • Harvard University

  • William D Oliver

    • Massachusetts Institute of Technology
    • Massachusetts Institute of Technology (MIT)