Thin ultraflat single crystals of arbitrary geometry via van der Waals injection molding

ORAL

Abstract

Confining quantum materials alters electronic structure and reduces bulk contributions while emphasizing boundary states. However, achieving nanostructures with precise geometries can require processing like etching which can introduce disorder. Here, we present a method to grow single crystals of arbitrary geometry in between layers of atomically flat van der Waals (vdW) materials [1]. Molten material is injection molded in a vdW encapsulated mold combining precise geometry control with an atomically smooth molding surface and environmental protection. Using this technique, we grow shapes such as hall bars of bismuth, tin, and indium with varying thicknesses between 10-90 nm with an ultraflat profile across the entire surface. Structural characterization reveals single crystals with large micron-scale atomically flat terraces. Cryogenic magnetotransport measurements of bismuth reveal exceptional electronic properties such as an enhanced residual-resistivity ratio, large magnetoresistance, quantum oscillations, and gated Landau fans. The geometric control afforded by this method provides a route towards on demand complex geometries such as nanowires and arrays of nanostructures without etching-induced disorder.

[1] Chen, L., Wu, A.X., Tulu, N. et al. Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials. Nat. Mater. 23, 741–746 (2024).

*The fabrication and measurements of ultrathin bismuth devices was primarily supported by the Air Force Office of Scientific Research under award number FA9550-21-1-0165, FA9550-23-1-0454 and FA9550-23-1-0454. Materials characterization and technique development was supported by the National Science Foundation (NSF) Materials Research Science and Engineering Center (MRSEC) program through the UC Irvine Center for Complex and Active Materials (DMR-2011967) Seed Program. The authors acknowledge the use of facilities and instrumentation at the UC Irvine Materials Research Institute (IMRI), which is supported in part by the National Science Foundation through the UC Irvine Materials Research Science and Engineering Center (DMR-2011967).

Presenters

  • Vinh Tran

    • University of California, Irvine
    • Department of Physics and Astronomy, California State University, Long Beach

Authors

  • Vinh Tran

    • University of California, Irvine
    • Department of Physics and Astronomy, California State University, Long Beach
  • Amy X Wu

    • University of California, Irvine
  • Laisi Chen

    • University of California, Irvine
  • Ziyu Feng

    • University of California, Irvine
  • Vijay R Kumar

    • University of California, Irvine
    • University of California Irvine
  • Takashi Taniguchi

    • National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
    • National Institute of Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Javier D Sanchez-Yamagishi

    • University of California, Irvine