Temperature and Magnetic field dependent relaxation dynamics of Boron-Vacancy centers in Hexagonal Boron Nitride
ORAL
Abstract
The negatively charged boron-vacancy center (VB-) in hexagonal boron nitride (hBN) has garnered substantial interest in recent years. The two-dimensional structure of hBN and its seamless integration with other van der Waals materials offer exciting possibilities for ultrathin, in-situ quantum sensors. To harness the unique properties of (VB-) centers, it is crucial to understand the physical characteristics of these defects. In this presentation, we explore the temperature and magnetic field-dependent spin relaxation times of (VB-) centers and their implications for practical quantum sensing. We further investigate the underlying phonon-related processes that influence the spin-relaxation rates. Additionally, we also discuss the impact of spin-spin interactions in a dense ensemble of spin defects.
*This work was supported by the U.S. Department of Energy (DOE), Office of Science, through the Quantum Science Center (QSC), DE-AC05-00OR22725, Air Force Office of Scientific Research Award FA9550-22-1-0372 and the National Science Foundation Award ECCS-1944635
–
Presenters
-
Abhishek Bharatbhai Solanki
- Purdue University