Highly integrated optoelectronic memristor in the visible range

Optoelectronic memristors represent a breakthrough in next-generation information storage, offering significant advances in neuromorphic computing and integrated photonic systems. However, the integration of these devices has been fundamentally restricted by diffraction-limited constraints on light and reduced efficiency in optical signals. Here, we present a tip induced nano-optoelectronic memristor that integrates conductive-bridge random access memory (CBRAM) with two-dimensional transition metal dichalcogenides (TMDs). Our approach utilizes precisely engineered electric fields generated by a nanoscale plasmonic tip, enabling the formation of nanoscale conductive filaments within the memristor structure. These filaments are optically addressable through conductive tip-enhanced photoluminescence (c-TEPL). Leveraging the enhanced plasmonic field confinement, we demonstrate unprecedented spatial resolution beyond the diffraction limit. Our experimental results validate both the electrical tunability and optical addressability within the visible spectrum, enabling ternary logic states. We envision that this modality paves the way toward nanoscale optoelectronics, advancing future memory technologies.