Charge-transfer enhanced quantum transport in MoTe2-based heterostructure

Two-dimensional (2D) semiconductors such as the transition metal dichalcogenides (TMDs) are emergent materials in which the valley and spin degrees of freedom are strongly coupled, making them promising candidates for next-generation quantum devices. However, achieving Ohmic contacts at various temperatures is challenging and has hindered the study of their intrinsic electrical properties. Here, we present the magneto-transport properties of monolayer MoTe₂, a material that has historically faced challenges due to the difficulty in achieving Ohmic contacts at cryogenic temperatures. By creating low-contact resistance interfaces we successfully measured the magnetoresistance of MoTe₂ under varying magnetic fields (B) and temperatures (T). Our results show clear Shubnikov-de Haas (SdH) oscillations. Additionally, we observed a splitting of the SdH oscillations indicating a large Zeeman splitting. These findings provide new insights into the electronic properties of MoTe₂, paving the way for future investigations into its quantum transport phenomena and the potential to engineer doping to enhance its electrical properties.