Quantized Edged States in Van der Waals injection-molded bismuth

ORAL

Abstract

Confinement of quantum materials reduces bulk contributions and isolates surface and edge states that are ideal for transport studies. Helical modes have been directly observed in bulk bismuth surfaces and hinges using STM and ARPES. In this work, we present transport measurements from single crystal, ultra-flat bismuth, grown inbetween atomically-flat van der Waals materials. We melt and inject bismuth into SiO2 molds lined with hexagonal boron nitride (hBN). The resulting bismuth crystals are ten times larger than those produced with our previous vdW-molding method [1]. Both injection molding and vdW-molding techniques reveal quantum oscillations and metallic behavior at low temperatures. Additionally, multi-terminal measurements show large non-local signals, indicative of edge state contributions at high magnetic fields. We will also discuss the results of dual gating on injection-molded bismuth surfaces. Furthermore, we have extended the injection-molding method to grow other high-quality thin crystals, such as tin, indium, and tellurium, to study their properties in the ultrathin and ultraflat limits.

[1] Chen, L., Wu, A.X., Tulu, N. et al. Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials. Nat. Mater. 23, 741–746 (2024). https://doi.org/10.1038/s41563-024-01894-0

*The fabrication and measurements of ultrathin bismuth devices was primarily supported by the Air Force Office of Scientific Research under award number FA9550-21-1-0165, FA9550-23-1-0454 and FA9550-23-1-0454. Materials characterization and technique development was supported by the National Science Foundation (NSF) Materials Research Science and Engineering Center (MRSEC) program through the UC Irvine Center for Complex and Active Materials (DMR-2011967) Seed Program. The authors acknowledge the use of facilities and instrumentation at the UC Irvine Materials Research Institute (IMRI), which is supported in part by the National Science Foundation through the UC Irvine Materials Research Science and Engineering Center (DMR-2011967).

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Presenters

  • Amy X Wu

    • University of California, Irvine

Authors

  • Amy X Wu

    • University of California, Irvine

  • Vinh Tran

    • University of California, Irvine
    • Department of Physics and Astronomy, California State University, Long Beach

  • Laisi Chen

    • University of California, Irvine

  • Ziyu Feng

    • University of California, Irvine

  • Vijay R Kumar

    • University of California, Irvine
    • University of California Irvine

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
    • National Institute of Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    • National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science

  • Javier D Sanchez-Yamagishi

    • University of California, Irvine