Quantized charge pumping in 22nm FDSOI CMOS foundry device.

ORAL

Abstract

Utilising the scale of the silicon industry to produce commercial nanoscopic quantum devices has been a long-standing goal of many research efforts. One of the goals is to realize the quantum ampere which can be used for the realization of SI ampere. Here, we utilise a device made in a commercial 22nm node FDSOI CMOS and operate two devices in the same chip as quantized current sources. We operate the devices in a two-quantum dot regime and utilise a previously explored charge transport scheme for dual quantum does [1]. We achieve current plateaus at frequencies up to 100 MHz in both devices at temperatures of 1.5K. Future aims include reaching metrologically relevant currents (~nA) by parallelizing the pumps like the ones we are using [2].

[1] B. Roche et al. Nat. Commun. 4 1581 (2013).

[2] A. Dash et al. IEEE Xplore pp. 1-2 (2024)

*We acknowledge support from the Australian Research Council (DP200103515), the U.S. Army Research Office (Grant No. W911NF-17-1-0198). We thank GlobalFoundries for die fabrication through the 22FDX university program, Dr. N. Cave and M. Zier for discussions A.D. and M.M.R. acknowledges scholarship support from the Sydney Quantum Academy, Australia.

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Presenters

  • Tuomo I Tanttu

    • University of New South Wales

Authors

  • Tuomo I Tanttu

    • University of New South Wales

  • Ajit Dash

    • The University of New South Wales

  • Steve Yianni

    • The University of New South Wales/Diraq

  • Ensar Vahapoglu

    • University of New South Wales

  • MengKe Feng

    • University of New South Wales

  • Md Mamunur Rahman

    • The University of New South Wales

  • Suyash P Tripathi

    • Fermi National Accelerator Laboratory
    • University of Toronto

  • Shai Bonen

    • University of Toronto

  • Sorin Voinigescu

    • University of Toronto

  • Andrew S Dzurak

    • University of New South Wales