Enhancing resonant second harmonic generation in bilayer WSe₂ by layer-dependent exciton-polaron effect

We employ dual-gate bilayer WSe₂ to demonstrate a second harmonic generation (SHG) enhancement concept that leverages strong exciton resonance and layer-dependent exciton-polaron effect. By selectively localizing injected holes within one layer, we induce exciton-polaron states in the hole-filled layer while maintaining normal exciton states in the charge-neutral layer. The distinct resonant conditions of these layers effectively break interlayer inversion symmetry, thereby promoting resonant SHG. Our method achieves a remarkable 40-fold enhancement of SHG at minimal electric field, equivalent to conditions near the dielectric-breakdown threshold but using only ~3% of the critical breakdown field. Our findings also reveal significant sensitivity of resonant SHG to carrier density and carrier type, with distinct enhancement and quenching observed across different gating regimes.