Oral: Flux assisted growth of low temperature BaZrS₃ thin films.

Chalcogenide perovskites are a promising class of semiconductor materials with potential applications in electronics and optoelectronics. Among them, BaZrS₃ stands out due to its high absorption coefficient, visible bandgap below 2 eV, excellent stability, and relatively mild synthesis conditions. In this work, we present the synthesis of BaZrS₃ thin films via magnetron sputtering of Ba and Zr metal precursors, followed by sulfurization with CS₂ at relatively low temperatures. A NaF coating layer was applied to protect the film and enhance diffusion. Our results demonstrated that BaZrS₃ thin films with NaF coating exhibited improved crystallinity, better film quality, and enhanced photoresponse, as verified by photodetector devices.